Thermal Annealing-Activated Crystallinity Metastasis of Al:ZnO Thin Films

Mohd Firdaus Malek; Mohamad Hafiz Mamat; M.Z. Musa; M. Rusop

doi:10.4028/www.scientific.net/AMR.1109.181

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1109Thermal Annealing-Activated Crystallinity...

Thermal Annealing-Activated Crystallinity Metastasis of Al:ZnO Thin Films

Abstract:

Multilayered thin films of aluminum-doped ZnO (Al:ZnO) have been deposited by the sol-gel dip coating technique. Experimental results indicated that the thermal annealing temperature affected the crystallinity of the Al:ZnO films. X-ray diffraction (XRD) analysis showed that thin films were preferentially orientated along the c-axis plane. The preferred orientation along (0 0 2) plane becomes more pronounced as the thermal annealing being increased. The film thickness ranges between 180 and 690 nm. In our experiments, the most optimum condition of Al:ZnO annealing temperature was both 500 oC.

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Periodical:

Advanced Materials Research (Volume 1109)

Pages:

181-185

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1109.181

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Online since:

June 2015

Authors:

Mohd Firdaus Malek*, Mohamad Hafiz Mamat, M.Z. Musa, M. Rusop

Keywords:

Al:ZnO, Dip-Coating, Photoresponse, Sol-Gel

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