Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

Jian Lin Chen; Yan Jie Ren; Jian Chen; Jian Jun He; Ding Chen

doi:10.4028/www.scientific.net/AMR.485.144

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 485Growth of the Sol-Gel Based ZnO:Al Thin Films with...

Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

Abstract:

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al³⁺ precipitate in the form of amorphous Al₂O₃ and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al₂O₃ and ZnO:Al matrix.

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Periodical:

Advanced Materials Research (Volume 485)

Pages:

144-148

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.485.144

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Online since:

February 2012

Authors:

Jian Lin Chen, Yan Jie Ren, Jian Chen, Jian Jun He, Ding Chen

Keywords:

Al-Doped, Sol-Gel (SG), Transparent Conducting Oxide (TCO), Zinc Oxide (ZnO)

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