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Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics

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Abstract:

Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.

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Periodical:

Advanced Materials Research (Volumes 105-106)

Pages:

245-247

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.105-106.245

Citation:

Cite this paper

Online since:

April 2010

Authors:

Yan Jie Zhang, Zhi Jun Xu, Rui Qing Chu, Ji Gong Hao, Guo Rong Li, Qing Rui Yin, Pei Ying Zhu, Xin Wu, Qing Jun Lu, Lei Ding

Keywords:

Bismuth Layer Structure, Dielectric, Ferroelectric, Sr2Bi(4-x/3)Ti(5-x)VxO18

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