Abstract
The incorporation of deep levels in high purity vapour phase epitaxy (VPE) GaAs is studied as a function of the crystal growth conditions. Two deep levels, at 0.4 eV and 0.75 eV above the valence band, are investigated using photocapacitance. It is shown that their concentrations are always equal and vary together as a function of the AsCl3 mole fractionX. Two regimes are observed, respectively, characterized by different variations of the total deep level concentrationN T:N TαX for lowX, andN TαX−2 for highX. In this last range,N T andN D are found to vary similarly.
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This work has been supported by the DRME.
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Humbert, A., Hollan, L. & Bois, D. Incorporation of deep centres in VPE GaAs. Appl. Phys. 9, 117–119 (1976). https://doi.org/10.1007/BF00903947
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DOI: https://doi.org/10.1007/BF00903947