Abstract
The effect of amphoteric negative-U centers on the temperature dependence of the free-carrier density is studied. The particular form of this dependence is due to the two-stage nature of the capture and generation processes. Numerical computations of the free-carrier density are given.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 92–95, July, 1991.
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Goncharova, A.G., Zuev, V.V. Distinctive features of thermal ionization of negative-U centers in a semiconductor. Soviet Physics Journal 34, 639–641 (1991). https://doi.org/10.1007/BF00897999
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DOI: https://doi.org/10.1007/BF00897999