Abstract
The transient temperature profile during thermal plasma jet annealing has been investigated by optical reflectivity measurements. The transient reflectivity measured during the annealing shows oscillation, which originates from the changes in the refractive indices of a Si film and a quartz substrate with temperature. By analyzing the oscillation, we have successfully obtained the temperature profile during the annealing with a time resolution of milliseconds. As a result of such analysis when the power input to a plasma source is 2.2 kW, the surface temperature has been observed to increase from 1300 to 1560 K by decreasing the scan speed from 1000 to 500 mm/s.