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Geant4 simulation of energy deposition ratio and physical processes of CdZnTe crystals irradiated by high energy particles

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Abstract

CdZnTe (CZT) is an II–VI compound semiconductor with a zinc blende structure and has a wide range of applications in nuclear radiation detectors. As the device size becomes nanoscale, the displacement damage caused by high-energy proton irradiation in space environment has become one of the main factors affecting the electrical properties of components. In this paper, Monte Carlo software Geant4 is used to simulate the types and proportions of physical processes generated by different particles incident on CZT crystals, the proportion and depth distribution of NIEL of particles with different energy/angle. The results show that the type, energy and angle of incident particles will affect the proportion of energy deposition and the distribution of energy deposition with depth during irradiation. The physical effects are different under different irradiation conditions. The simulation results have reference value for studying the displacement damage law of CZT irradiated by particles under different conditions and the stability of CZT detector in radiation environment.

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Data availability

The datasets used and/or analysed during the current study available from the corresponding author on reasonable request.

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Acknowledgements

This research was Supported by Open Fund of State Key Laboratory of Infrared Physics (Grant no. SITP-NLIST-YB-2023-17).

Funding

The study was funded by State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment (Grant no. K-A 2019.418) and Key Laboratory of Infrared Imaging Materials and Devices (Grant no. IIMDKFJJ-20-01).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200443, China

    Meng Cao, Jiahao Deng, Weifan He, Yongjie Zhou & Linjun Wang

  2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Beijing, 200083, China

    Runzhang Xie

  3. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China

    Yucheng Jiang

  4. Zhejiang Institute of Advanced Materials, SHU, Jiashan, 314113, China

    Linjun Wang

Authors
  1. Meng Cao
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  2. Jiahao Deng
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  3. Weifan He
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  4. Yongjie Zhou
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  5. Runzhang Xie
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  6. Yucheng Jiang
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Contributions

MC: writing—original draft preparation. JD: conceptualization, methodology; WH: software. YZ: writing reviewing and editing. YJ: calculation. LW: data curation. JD: resources. WH: formal analysis. YZ: validation. RX: calculation. LW: supervision.

Corresponding authors

Correspondence to Meng Cao or Runzhang Xie.

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Cao, M., Deng, J., He, W. et al. Geant4 simulation of energy deposition ratio and physical processes of CdZnTe crystals irradiated by high energy particles. Appl. Phys. A 129, 595 (2023). https://doi.org/10.1007/s00339-023-06862-0

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