Abstract
Remarkable reduction of the threading dislocation (TD) density has been achieved by inserting a GaN layer grown at an intermediate temperature (900 °C) (IT-GaN layer), just prior to the growth of GaN at 1040 °C by using a hydride vapor phase epitaxy. The variation in the dislocation density variation along the growth direction was observed by using cathodoluminescence (CL) and transmission electron microscopy (TEM). A cross-sectional CL image revealed that the reduction of the TD density happened during the growth of IT-GaN layer. The TEM measurement provided the proof that the TD reduction could be ascribed to the masking of the TD by stacking faults in the IT-GaN layer.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushida, Y. Suhimoto and H. Kiyoku, Appl. Phys. Lett. 69, 3034 (1996).
H. Morko, G. S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. 76, 1363 (1997).
Y. F. Wu, D. Kapolnet, J. P. Ibbetson, P. Parikh, B. P. Keller and U. K. Mishra, IEEE Electron. Dev. Lett. 48, 586 (2001).
T. Hashimoto, F. Wu, J. S. Speck and S. Nakamura, Nat. Mater. 6, 568 (2007).
M. Morishitia, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Mori and T. Sasaki, J. Cryst. Growth 271, 270 (2004).
E. Richter, U. Zeimer, F. Brunner, S. Hagedorn, M. Weyers and G. Tränkle, Phys. Stat. Sol. (c) 7, 28 (2010).
C. R. Miskys, M. K. Kelly, O. Ambacher, G. Martínez-Criado and M. Stutzmann, Appl. Phys. Lett. 77, 1858 (2000).
A. Sakai, H. Sunakawa and A. Usui, Appl. Phys. Lett. 73, 481 (1998).
S. W. Lee et al., Appl. Phys. Lett. 94, 082105 (2009).
G.-T. Chen, J.-I. Chyi, C.-H. Chan, C.-H. Hou, C.-C. Chen and M.-N. Chang, Appl. Phys. Lett. 91, 261910 (2007).
H.-J. Lee, J.-S. Ha, T. Yao, C. Kim, S.-K. Hong, J. Chang, J. W. Lee and J. Y. Lee, Cryst. Growth Des. 9, 2877 (2009).
Y. J. Cho et al., J. Cryst. Growth 312, 1693 (2010).
J. Schreiber, S. Hildebrandt, H. Uniewski and V. Bechstein, Mat. Sci. Eng. B42, 24 (1996).
C. Stampfl and C. G. Van de Walle, Phy. Rev. B 57, R15052 (1998).
R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Tang and M. A. Khan, Appl. Phys. Lett. 86, 021908 (2005).
M. A. Reshchikov, and H. Morkoç, J. Appl. Lett. 97, 061301 (2005).
T. B. Wei, Q. Hu, R. F. Duan, X. C. Wei, Z. Q. Huo, J. X. Wang, Y. P. Zeng, G. H. Wang and J. M. Li, J. Cryst. Growth 311, 4153 (2009).
Y. J. Sun, O. Brandt, U. Jahn, T. Y. Liu, A. Trampert, S. Cronenberg, S. Dhar and K. H. Ploog, J. Appl. Phys. 92, 5714 (2002).
N. Yamamoto et al., J. Appl. Phys. 94, 4315 (2003).
W. J. Bartels, J. Vac. Sci. Technol. B1, 338 (1983).
S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe and J. S. Speck, J. Cryst. Growth 231, 371 (2001).
Y. T. Rebane, Y. G. Shreter and M. Albrecht, Phys. Stat. Sol. (a) 164, 141 (1997).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Cho, Y., Chang, J., Ha, J. et al. Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature. Journal of the Korean Physical Society 66, 214–218 (2015). https://doi.org/10.3938/jkps.66.214
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.66.214