Abstract
The low temperature (300–400°C) out-diffusion of an underlying metal through a thin film overlayer of another metal has been studied in ambients of N2 and forming gas. Surface oxidation of this out-diffused metal can interfere with the attachment of terminating components used in semiconductor devices. AES depth profile analysis has shown that the out-diffusion of Ni through Au is suppressed in a forming gas ambient. It has also been shown that the extent of this out diffusion can be modified considerably by the presence of Cu.
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Lewis, R.K., Ray, S.K. & Seshan, K. Effects of Ambient Gas on the Out-Diffusion of Nickel and Copper through Thin Gold Films. MRS Online Proceedings Library 48, 425–430 (1985). https://doi.org/10.1557/PROC-48-425
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DOI: https://doi.org/10.1557/PROC-48-425