Abstract
We have developed a novel deep trench and local oxidation of silicon (LOCOS) isolation technology termed SITOS II in order to isolate the shallow-well regions necessary for realizing a high speed dynamic threshold metal oxide semiconductor field effect transistor (MOSFET) in a bulk wafer. Using this simple isolation technology, suppression of birds-beak formation, low junction leakage current, high punch-through voltage between shallow-wells, and sub-threshold transistor characteristics without kinks were achieved.
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