Abstract
Planar metal-ferroelectric-superconductor field effect transistors (MFS-FETs) have been fabricated on SrTiO3 (100) substrates. The FET has the structure of Al/BaTiO3 (BTO) /(Y0.6Pr0.4)Ba2Cu3Oy (YPBCO), where the oxide layers are grown heteroepitaxially by ArF excimer laser deposition using an in situ metal mask changing system. The relative dielectric constant (ε r) of BTO is 200 at 77 K, and the ferroelectric field effects at low temperature have been measured. The source-drain current (I SD) is enhanced 28% by applying negative gate voltage of -1.5 V. These results indicate that the Al/BTO/YPBCO structures are favorable for use in the superconducting FET.