Abstract
The growth of high-resistivity Bi2Sr2Cu1-xTixOy (x=0, 0.1, 0.2, 0.3) thin films on SrTiO3 (100) substrates has been performed using the laser molecular beam epitaxy method. The aim is to obtain a tunneling barrier with a barrier higher than that of Bi2Sr2CuO6 (2201) film. The growth process has been observed in situ by reflection high-energy electron diffraction, and the films are characterized by the X-ray diffraction method. The growth of Bi2Sr2Cu0.8Ti0.2Oy film on the superconducting Bi2Sr2CaCu2O8 single crystal has also been examined for the tunneling barrier. This has a higher barrier than the titanium-free 2201 film in the Au/barrier/Bi2Sr2CaCu2O8 tunneling junctions.