Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Bing-Xiong Yang Bing-Xiong Yang and Hideki Hasegawa Hideki Hasegawa 1991 Jpn. J. Appl. Phys. 30 3782 DOI 10.1143/JJAP.30.3782

1347-4065/30/12S/3782

Abstract

InP was successfully grown by the migration-enhanced epitaxy (MEE) mode using polycrystalline InP as the phosphorus source in a conventional GaAs-type molecular beam epitaxy (MBE) chamber. A long and persistent reflection high-energy electron diffraction (RHEED) oscillation was observed. (2×4) RHEED patterns were observed in both In-supply and P2-supply periods, being different from the GaAs MEE growth. Compared with the conventional MBE, the MEE growth afforded epitaxial layers of better surface morphology and greatly improved photoluminescence properties.

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10.1143/JJAP.30.3782