Interband optical transitions in GaAs-Ga1xAlxAs and InAs-GaSb superlattices

Yia-Chung Chang and J. N. Schulman
Phys. Rev. B 31, 2069 – Published 15 February 1985
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Abstract

Optical properties of GaAs-Ga1xAlxAs and InAs-GaSb superlattices are studied within the framework of tight-binding approximation. The momentum matrix elements between tight-binding orbitals are related to those between Brillouin-zone-center Bloch states computed by a full-zone k→⋅p→ theory. The optical matrix elements of transitions from several valence subbands to several conduction subbands are calculated as functions of the well width and of the wave vector. It is found that the mixing of the heavy- and light-hole components in the superlattice states gives rise to a large variation in the optical matrix elements as k→ moves away from the zone center. The band mixing in conjunction with the exciton effect leads to weak structures in the absorption spectrum which can account for the forbidden transitions observed in several recent experiments.

  • Received 2 July 1984

DOI:https://doi.org/10.1103/PhysRevB.31.2069

©1985 American Physical Society

Authors & Affiliations

Yia-Chung Chang

  • Department of Physics and Materials Research Laboratory, University of Illinois at UrbanaChampaign, 1110 West Green Street, Urbana, Illinois 61801

J. N. Schulman

  • Department of Physics and Astronomy, University of Hawaii at Manoa, Honolulu, Hawaii 96822

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Issue

Vol. 31, Iss. 4 — 15 February 1985

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