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  • 1
    Publication Date: 2023-12-16
    Description: 〈title xmlns:mml="http://www.w3.org/1998/Math/MathML"〉Abstract〈/title〉〈p xmlns:mml="http://www.w3.org/1998/Math/MathML" xml:lang="en"〉Three volcanic arcs have been the source of New Zealand's volcanic activity since the Neogene: Northland arc, Coromandel Volcanic Zone (CVZ) and Taupō Volcanic Zone (TVZ). The eruption chronology for the Quaternary, sourced by the TVZ, is well studied and established, whereas the volcanic evolution of the precursor arc systems, like the CVZ (central activity c. 18 to 2 Ma), is poorly known due to limited accessibility to, or identification of, onshore volcanic deposits and their sources. Here, we investigate the marine tephra record of the Neogene, mostly sourced by the CVZ, of cores from IODP Exp. 375 (Sites U1520 and U1526), ODP Leg 181 (Sites 1123, 1124 and 1125), IODP Leg 329 (Site U1371) and DSDP Leg 90 (Site 594) offshore of New Zealand. In total, we identify 306 primary tephra layers in the marine sediments. Multi‐approach age models (e.g. biostratigraphy, zircon ages) are used in combination with geochemical fingerprinting (major and trace element compositions) and the stratigraphic context of each marine tephra layer to establish 168 tie‐lines between marine tephra layers from different holes and sites. Following this approach, we identify 208 explosive volcanic events in the Neogene between c. 17.5 and 2.6 Ma. This is the first comprehensive study of New Zealand's Neogene explosive volcanism established from tephrochronostratigraphic studies, which reveals continuous volcanic activity between c. 12 and 2.6 Ma with an abrupt compositional change at c. 4.5 Ma, potentially associated with the transition from CVZ to TVZ.〈/p〉
    Description: Plain Language Summary: Since 18 Ma, volcanic activity in New Zealand is dominantly sourced by the Coromandel Volcanic Zone (CVZ). Most caldera systems of the CVZ identified so far are located on Coromandel Peninsula in the NW of North Island, New Zealand, but studies of the CVZ are rare mainly due to the limited accessibility of its volcanic deposits, as well as missing stratigraphic continuity between different outcrops and the volcanic source. Here, our ocean drilling tephra record—mainly volcanic ash from explosive eruptions, distributed and falling out over the ocean—has a great potential to reveal the eruption history of the CVZ because it is preserved in marine sediments in a nearly undisturbed stratigraphic context. We analyzed ∼400 marine tephra layers from multiple ocean sediment cores off the coast of New Zealand for their geochemical glass compositions and identified 306 as largely undisturbed ash deposits. These primary ash deposits correspond to a total number of 208 Neogene volcanic events. Different dating methods result in a continuous marine tephra record for the last 12 Ma, equivalent to a unique and most complete eruptive history for the CVZ. This enables us to further unravel changes in the composition of the associated magmas with time.〈/p〉
    Description: Key Points: 〈list list-type="bullet"〉 〈list-item〉 〈p xml:lang="en"〉New Zealand's Neogene explosive volcanism based on the marine tephra record〈/p〉〈/list-item〉 〈list-item〉 〈p xml:lang="en"〉Geochemical fingerprinting of marine tephra layers across the study area to establish volcanic events〈/p〉〈/list-item〉 〈list-item〉 〈p xml:lang="en"〉Insights into geochemical variations with time, repose times and spatiotemporal distribution〈/p〉〈/list-item〉 〈/list〉 〈/p〉
    Description: DFG
    Description: Marsden project
    Description: https://doi.org/10.14379/iodp.proc.372B375.210.2023
    Keywords: ddc:551 ; marine tephrochronostratigraphy ; geochemical fingerprinting ; correlations of marine tephras between individual drill sites ; IODP ; ODP and DSDP drill sites ; neogene eruption record of New Zealand
    Language: English
    Type: doc-type:article
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  • 2
    Publication Date: 2021-07-21
    Description: The Tierra Blanca (TB) eruptive suite comprises the last four major eruptions of Ilopango caldera in El Salvador (≤45 ka), including the youngest Tierra Blanca Joven eruption (TBJ; ∼106 km3): the most voluminous event during the Holocene in Central America. Despite the protracted and productive history of explosive silicic eruptions at Ilopango caldera, many aspects regarding the longevity and the prevailing physicochemical conditions of the underlying magmatic system remain unknown. Zircon 238U‐230Th geochronology of the TB suite (TBJ, TB2, TB3, and TB4) reveals a continuous and overlapping crystallization history among individual eruptions, suggesting persistent melt presence in thermally and compositionally distinct magma reservoirs over the last ca. 80 kyr. The longevity of zircon is in contrast to previously determined crystallization timescales of 〈10 kyr for major mineral phases in TBJ. This dichotomy is explained by a process of rhyolitic melt segregation from a crystal‐rich refractory residue that incorporates zircon, whereas a new generation of major mineral phases crystallized shortly before eruption. Ti‐in‐zircon temperatures and amphibole geothermobarometry suggest that rhyolitic melt was extracted from different storage zones of the magma reservoir as indicated by distinct but synchronous thermochemical zircon histories among the TB suite eruptions. Zircon from TBJ and TB2 suggests magma differentiation within deeper and hotter parts of the reservoir, whereas zircon from TB3 and TB4 instead hints at crystallization in comparatively shallower and cooler domains. The assembly of the voluminous TBJ magma reservoir was also likely enhanced by cannibalization of hydrothermally altered components as suggested by low‐δ18O values in zircon (+4.5 ± 0.3‰).
    Description: Plain Language Summary: The collapse of a volcano edifice into its shallow magma chamber can produce one of the most dangerous single events in nature, known as a caldera‐forming eruption. The TBJ eruption in El Salvador is of this kind and occurred around 1,500 years ago, having a profound impact on Maya societies. Because of this, it is crucial to understand the inner workings of caldera‐forming eruptions to assess volcanic risks and their mitigation. Beneath Ilopango caldera, the micrometer‐sized radioisotopically datable mineral zircon grew within different storage levels of a silica‐rich magma reservoir suggesting continuous melt presence for up to ca. 80,000 years prior to eruption. The time information given by zircon contrasts with that extracted from other, more abundant minerals from the same rocks (〈10,000 years). We explain this time difference between coexisting minerals by the ability of melt to carry along small zircon crystals, whereas coeval, larger, and more abundant minerals are left behind in the partially solidified portion of the magma reservoir. Once the segregated melt coalesced in a shallower and dominantly liquid magma chamber, major minerals resumed crystallization shortly before eruption. In addition, this new magma incorporated parts of older magmatic rocks from preceding volcanic cycles, thus generating even larger magma volumes.
    Description: Key Points: U‐Th zircon ages for the last four explosive eruptions of Ilopango caldera reveal a long‐lived magma reservoir (〉80 kyr). Contrasting residence times for major minerals and zircon suggest extraction of zircon along with evolved melt from crystal residue. Melt extraction from vertically extensive, thermally zoned magma reservoir.
    Description: Deutsche Forschungsgemeinschaft (DFG) http://dx.doi.org/10.13039/501100001659
    Keywords: 549 ; 551.701 ; Central America ; Geochemistry ; Oxygen isotopes ; SIMS ; U‐series ; Zircon
    Type: article
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4475-4481 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly metastable pseudomorphic Ge0.3Si0.7 layers 570 nm thick were grown on Si(100) at ∼300 °C by molecular-beam epitaxy. The relief of strain in such metastable layers upon ex situ thermal annealing in vacuum is investigated by double-crystal x-ray diffractometry and MeV 4He channeling spectrometry. Upon isochronal annealing of 30 min, the strain relieves sharply at (375±25) °C, and reaches the thermal equilibrium value above 400 °C. Under isothermal annealing between 300 and 400 °C, the time evolution of the strain relief has the characteristics of a nucleation and growth transformation. The strain relief is very slow initially, increases approximately linearly as the strain is partially relieved, and saturates upon approaching equilibrium strain state. Two important results are drawn from the experimental data. First, a deformation-mechanism map is constructed from which the strain relief rate of a metastable GeSi/Si can be extrapolated for given stress state and temperature. Second, the rate of the strain relief when the strain is partially relieved increases with rising temperature, and follows an Arrhenius behavior as a function of the inverse temperature with a slope of 2.1±0.2 eV. This value coincides with the activation energy for dislocation glide in Ge0.3Si0.7. Furthermore, the strain-relief equation of a plastic flow model is solved and fits well the experimental strain-time dependence. One of the two fitting parameters, the time constant, has an Arrhenius temperature dependence. The slope, 1.9±0.2 eV, is assumed to be the activation energy for dislocation motion, and agrees with the previous value extracted from the simple rate-temperature dependence. In addition, as the strain is relieved, the x-ray-diffraction peak from the layer broadens and the channeling yield increases, confirming that the generation of misfit dislocations associated with the strain relief is accompanied by the generation of threading dislocations in the layer.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4903-4905 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase modulation of asymmetric quantum-well embedded waveguides is studied. In order to accurately analyze the modulation from quantum wells and optimize the performance of waveguide modulators, a transfer-matrix method is developed to calculate the bias-controlled phase modulation of waveguides with an arbitrary refractive index distribution. The refractive index change may include those from free-carrier effects and the nonlinear effects of bulk material and quantum wells. The linear electro-optic effect introduced by asymmetric quantum wells can potentially be used to improve the frequency performance of semiconductor waveguide phase modulators.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 982-986 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage and strain produced in a 370-nm-thick strained epitaxial Ge0.10Si0.90 film on Si(100) by irradiation with 320 keV 28Si+ ions at fixed temperatures ranging from 40 to 150 °C and for doses from 1 to 30×1014/cm2 have been measured by MeV 4He channeling spectrometry, transmission electron microscopy, and high-resolution x-ray diffractometry. The ion energy was chosen so that the maximum damage created by irradiation occurs very near the GeSi-Si interface. For all temperatures, the retained damage and the perpendicular strain induced by the irradiation are significantly greater in the GeSi epilayer than in the Si substrate. For all doses the retained damage and the induced perpendicular strain become small above 100 °C. Both rise nonlinearly with increasing ion dose. They are related to each other differently in GeSi than in bulk Si or Ge irradiated at room temperature. Postirradiation furnace annealing can remove a large portion of the induced damage and strain for nonamorphized samples. Amorphized samples regrow by solid-phase epitaxy after annealing at 550 °C for 30 min; the regrown GeSi is, however, highly defective and elastically relaxed. A consequence of this defectiveness is that irradiation-induced amorphization in metastable GeSi is undesirable for applications where good crystalline quality is required. Ion implantation above room temperature can prevent amorphization. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1246-1252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1505-1509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In an attempt to reduce the number of threading dislocations propagating through a silicon epitaxial layer grown on an implanted buried-oxide structure, a SiGe/Si superlattice was placed between the initial silicon surface layer and the subsequently grown silicon epitaxial layer. Both the superlattice and the silicon epitaxial layer were formed by molecular-beam epitaxy. Some of the threading dislocations are bent parallel to the superlattice as they propagate through the structure. Some of these are annihilated by interacting with other dislocations while others bend toward the surface again after propagating parallel to the superlattice for some distance. The effect of the superlattice is limited, and many of the dislocations continue propagating through the superlattice toward the surface of the silicon epitaxial layer.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2968-2970 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we have calculated the free-electron density in a finite superlattice. Resonant tunneling causes a buildup of particle density in the well regions, giving rise to an accumulation of electrons in those regions. Using our results, we have estimated the change in barrier heights and well depths caused by the electrostatic force. A negligible change is found for a double-well structure having well widths of 40 A(ring) and barrier widths of 20 A(ring). Our approach could be extended to calculate the tunneling current self-consistently. Additionally we have used a time-dependent solution of Schrödinger's equation to estimate the trapping time of the electrons due to the resonant effect. The results show that the probability density oscillates several times between the two wells, leaking out gradually at each step. After about 2.4×10−13 s, most of the waves centered about the resonant energies have been transmitted.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1973-1976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiwall carbon nanotubes have been grown by gas source molecular beam epitaxy in the presence of Ni catalyst. Some nanotubes show thinner bases compared with their heads. First- and second-order Raman scattering spectra are used to study the structure of samples with different initial thicknesses of Ni layers. The second-order 2D Raman mode of carbon nanotubes shows a downshift compared with the graphite-like structure. The growth of carbon nanotubes is found to depend on the size of the metal droplets. When the initial Ni layer is either too thick or too thin, few carbon nanotubes are observed. The Raman spectra show graphite and glassy carbon structures for too thick and too thin initial Ni layer films, respectively. Only when a proper range of Ni catalyst film is used, carbon nanotubes could be found. © 2001 American Institute of Physics.
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