Schlagwort(e):
Forschungsbericht
Beschreibung / Inhaltsverzeichnis:
Monte Carlo method, strained SiGe, full band Monte Carlo, transport parameters, hetero bipolar transistor
Materialart:
Online-Ressource
Seiten:
Online-Ressource, 115 p. = 3,09 Mb., text and images
,
ill., graphs
Ausgabe:
[Elektronische Ressource]
URL:
https://edocs.tib.eu/files/e01fb01/333286626.pdf
URL:
https://edocs.tib.eu/files/e01fb01/333286626l.pdf
Sprache:
Deutsch
Anmerkung:
Differences between the printed and electronic version of the document are possible
,
Contract BMBF 01 M 2416 C. - Engl. abstract under title: Monte Carlo device simulation for strained SiGe material and HBTs
,
nIndex p. 109 - 113
,
Also available as printed version
,
Systemvoraussetzungen: Acrobat Reader.
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