GLORIA — GEOMAR Library Ocean Research Information Access

1

Digitale Medien

Photoelectric properties of Copper-phthalocyanine/PbTe multilayer (1996)

Lee, Heayeon ; Kawai, Tomoji

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 3601-3603

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The transverse current–voltage characteristics of Copper- phthalocyanine (CuPc)/Si, PbTe/Si, and PbTe/CuPc/Si junction have been observed in the dark and under illumination. The PbTe/CuPc/Si junction exhibits a strong photovoltaic response with quantum efficiency of 15.4% and power conversion efficiency of 3.46×10−2. The photocarrier is generated in CuPc layer and the carrier is well separated by the steep incline of the potential near the CuPc/PbTe interface. The CuPc/PbTe multilayers show large photoconduction effect in the in-plane direction. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363235

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2

Digitale Medien

Preparation of crystallized zinc oxide films on amorphous glass substrates by pulsed laser deposition (1996)

Hayamizu, Shunichi ; Tabata, Hitoshi ; Tanaka, Hidekazu ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 787-791

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Zinc oxide (ZnO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition with an ArF excimer laser. The fluctuations of c-axis orientation of the ZnO films are evaluated by full width at half-maximum (FWHM) of the rocking curve of the x-ray diffraction. The ZnO films with a FWHM of 1.9° can be obtained on the optimum conditions (substrate temperature of 500–600 °C, O2 gas pressure of 2–6×10−4 Torr) even at a thickness of 200 nm. We have observed the crystallization of the ZnO during film formation by using in situ reflection high energy electron diffraction. It is confirmed that ZnO thin films with a thickness of up to about 50 nm have c-axis orientation on the glass substrates. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.362887

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3

Digitale Medien

Electrical properties of (Zr,Sn)TiO4 dielectric thin film prepared by pulsed laser deposition (1996)

Nakagawara, Osamu ; Toyota, Yuji ; Kobayashi, Masato ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 388-392

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have been successful in obtaining temperature-stable crystallized thin film of (Zr,Sn)TiO4. Preferential (111)-oriented (Zr,Sn)TiO4 thin film was prepared by pulsed laser deposition. Effects of crystallization were elucidated based on a comparison of electric properties of crystallized and amorphous (Zr,Sn)TiO4 film. For crystallized film, the temperature coefficient of capacitance (TCC) was 20 ppm/°C at 3 MHz and the dielectric constant cursive-epsilonr=38 in the microwave range of 1–10 GHz. These values are superior to those for amorphous film (TCC=220 ppm/°C, cursive-epsilonr=27). The crystallization of this material was found quite effective for improving dielectrical properties. Atomic force microscope images showed the surface morphologies of crystallized and amorphous film of (Zr,Sn)TiO4 to differ. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.362795

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4

Digitale Medien

Effects of buffer layers in epitaxial growth of SrTiO3 thin film on Si(100) (1995)

Nakagawara, Osamu ; Kobayashi, Masato ; Yoshino, Yukio ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 7226-7230

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: SrTiO3 thin film has been formed on Si(100) substrates with various single buffer layers such as SrO, CeO2, CaF2, CoSi2 and a multibuffer layer, YSZ/Y2O3/YBa2Cu3O7 by ArF excimer laser ablation. The relation of lattice orientation of buffer layers with SrTiO3 layer has been elucidated. The orientation of SrTiO3 film is influenced not only by lattice matching but by crystal structure and chemical bonding of the buffer layers. As well, the multibuffer layer more effectively forms preferential c-axis oriented SrTiO3 film on Si(100), while CoSi2 buffer is more effective for improving the dielectric constant of SrTiO3 than other buffer layers. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.360433

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5

Digitale Medien

Epitaxial growth and surface acoustic wave properties of lithium niobate films grown by pulsed laser deposition (1995)

Shibata, Yoshihiko ; Kaya, Kiyoshi ; Akashi, Kageyasu ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 1498-1503

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The deposition of lithium niobate (LiNbO3) films on sapphire substrates (001) and (110) using pulsed excimer-laser ablation has been investigated. The effect of several experimental parameters. Li/Nb ratio of the target, the substrate temperature, and the pressure and composition of the gas during the deposition, on the resulting film quality are examined. Under optimized conditions, epitaxial LiNbO3 films of high quality are deposited. The as-grown LiNbO3 films are sufficiently piezoelectric to fabricate surface acoustic wave (SAW) devices without poling. Rayleigh and Love-type waves are observed on the films and these waves show high velocities of propagation (5300 to 6600 m/s) and good temperature coefficients (−34 to −80 ppm/deg). The chemical composition, microstructure, crystallographic orientation, crystallinity, and SAW properties of the films are evaluated. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.358900

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6

Digitale Medien

Control of electrical conductivity in laser deposited SrTiO3 thin films with Nb doping (1994)

Tomio, Takeshi ; Miki, Hidejiro ; Tabata, Hitoshi ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 5886-5890

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Nb-doped SrTiO3 (STO) thin films (Nb, 0〈x〈100 mol%) with a-axis orientation have been prepared on nondoped STO (100) and LaAlO3 (100) single crystals using a pulsed laser deposition technique. Solid-solution films are formed between STO and SrNbO3 without any impurity phases. Electrical conductivities of Nb-doped STO films can be controlled from 10−7 to 104 S/cm by changing the concentration of the doped Nb. Carrier concentration of the Nb-doped STO films also increases by increasing the Nb concentration.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.358404

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7

Digitale Medien

Dependence of carrier doping level on the photo control of (La, Sr)MnO3/SrTiO3 functional heterojunction (2001)

Katsu, Hayato ; Tanaka, Hidekazu ; Kawai, Tomoji

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 4578-4582

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In a junction system which consists of ferromagnetic- (La1−xSrx)MnO3 and band insulating-SrTiO3, the double exchange ferromagnetism in the (La, Sr)MnO3 layer was controlled by light irradiation through photocarrier injection form SrTiO3. We investigated the dependence of hole doping level (Curie temperature) on the photo control of the (La, Sr)MnO3/SrTiO3 heterojunction. Whereas magnetization and conductivity of the heterojunction with TC of 240 K is strongly reduced, including from metal–insulator transition, by light irradiation, that with TC of 280 K cannot be modulated. This result indicates that phase boundary, between the metallic and insulating region on the (La1−xSrx)MnO3 phase diagram, plays an important role in photo carrier control of the functional heterojunction. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1410328

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8

Digitale Medien

Control of magnetic properties in LaCrO3–LaFeO3 artificial superlattices (2001)

Ueda, Kenji ; Tabata, Hitoshi ; Kawai, Tomoji

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 2847-2851

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The magnetic properties of LaFeO3–LaCrO3 superlattices have been artificially controlled by adjusting the atomic order of the B site ions via changes of the stacking direction of the 〈100〉, 〈110〉 and 〈111〉 planes and adjustment of the stacking periodicity. When Fe and Cr layers are atomically stacked along the 〈111〉 direction, ferromagnetism appears. In the case of superlattices growing along the 〈100〉 and 〈110〉 directions, antiferromagnetic properties appear, and the Néel temperature changes systematically as the stacking periodicity increases. Although the total number of Fe and Cr ions are the same in the (100), (110) and (111) stacking planes, different magnetic properties can be created in artificial superlattices. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1327287

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9

Digitale Medien

Photoexcited spin-glass state in (Mg, Fe){Mg,Fe,Ti}O4 spinel ferrite films (2000)

Muraoka, Yuji ; Tabata, Hitoshi ; Kawai, Tomoji

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 7223-7229

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Spin-glass states above room temperature have been found in (Mg, Fe){Mg,Fe,Ti}2O4 spinel ferrite thin films formed on Al2O3 (0001) and SrTiO3 (111) substrates. The films show a long-time relaxation of the magnetization in zero-field-cooled operation and a frequency dependence of the cusp temperature in ac susceptibility measurement, both of which are typical characteristics of a spin glass. This high-temperature spin-glass state has been achieved by the fine tuning of spin states through the control of composition, random oxygen deficiencies, and the stress induced by the film/substrate lattice mismatch, all of which give rise to effects that enhance the exchange interaction of spins in the ferrite films. We have demonstrated the change of magnetic state by means of light irradiation from spin glass to a ferrimagnet over a wide range of temperatures below 290 K. The direct photoexcitation of spins with photon energy in the visible-light region (1.7–3.2 eV), which corresponds to the spin excitation energy of crystal field for Fe ions located in both tetrahedral and octahedral sites, is effective for realizing photoinduced magnetization. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1327601

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10

Digitale Medien

Effect of magnetic exchange interactions in La(Sr)MnO3/LaMO3 (M=Fe,Cr,Co,Ni) artificial superlattices and their magnetic/ electrical properties (2000)

Tanaka, Hidekazu ; Kawai, Tomoji

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 1559-1565

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have fabricated conductive-ferromagnetic [(La0.8Sr0.2)MnO3/antiferromagnetic-[LaFeO3] spin-frustrated superlattices and insulative-ferromagnetic [La1−δMnO3]/magnetic [LaMO3] (M=Ni,Co,Cr,Fe) superlattices through accurate unit cell control (1–10 units) using a laser-molecular beam epitaxy technique. In [(La,Sr)MnO3]m/[LaFeO3]n superlattices, it has been observed that resistivity is increased and TC is reduced from 270 to 130 K when the antiferromagnetic layer is increased. Metal–insulator transition occurred systematically in a series of superlattices (m=2) with n increasing from 1 to 3 unit cells. This can be explained by spin frustration induced by the neighboring antiferromagnetic spin order. This colossal magnetoresistance effect is enhanced by up to 35% in a magnetic field of 1.0 T. In [LaMnO3]1/[LaMO3]1 superlattices, reduction (M=Cr,Fe) and enhancement (M=Co,Ni) of TC have been observed. We propose an expression for TC on the basis of the molecular field image and demonstrate that the ferromagnetism is systematically affected by the neighboring magnetic layers via the interface. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.373855

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