In:
Journal of Physics: Conference Series, IOP Publishing, Vol. 1410, No. 1 ( 2019-12-01), p. 012060-
Kurzfassung:
The experimental and modelling results of the investigation of photovoltaic properties of the InP nanowires grown on p-Si substrate are presented. It is shown that InP 2D-layer between nanowires on Si is II-type heterojanction. The resulting structure exhibits an open-circuit voltage (Voc) of 0,37 V, a short-circuit current density (Jsc) of 10.6 mA/cm2, a fill factor (FF) of 0.61 and efficiency of 2.4% at 1 sun. The InP/p-Si structure can be applied as prototype for solar cells or the photosensitive component in an integrated circuit based on silicon technology.
Materialart:
Online-Ressource
ISSN:
1742-6588
,
1742-6596
DOI:
10.1088/1742-6596/1410/1/012060
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2019
ZDB Id:
2166409-2
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