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Stoichiometry control of atomic beam fluxes by precipitated impurity phase detection in growth of (Pr,Ce)2CuO4 and (La,Sr)2CuO4 films (1995)

Naito, Michio ; Sato, Hisashi

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2557-2559

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: This letter describes a method to sense slight off-stoichiometry (less than 2%–3%) in the cation ratio [Cu/(Pr+Ce) or Cu/(La+Sr)] of atomic beam fluxes by detecting precipitated impurity phases on the surface using reflection high-energy electron diffraction during growth of T′-(Pr,Ce)2CuO4 and T-(La,Sr)2CuO4 films. The method is based on the facts that off-stoichiometry of fluxes inevitably produces precipitates of certain impurity phases on the surface in film growth of these oxides, and that the species of the impurity phases are solely determined by the type of off-stoichiometry; copper rich or lanthanoid rich. Furthermore, it has been found that it is possible to recover a precipitate-free surface, from a surface with precipitates produced by lanthanoid-rich deposition, by later flux readjustment, but it is difficult from a surface with precipitates produced by copper-rich deposition. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.114431

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Digitale Medien

Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy (2001)

Karimoto, Shin-ichi ; Ueda, Kenji ; Naito, Michio

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 2767-2769

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Single-crystalline Sr1−xLaxCuO2 thin films of electron-doped infinite-layer compounds were grown by molecular-beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tconset=41.5 K and Tczero=39.0 K, which is close to the highest Tconset of 43 K for the bulk value. The resistivity of the optimum-doped film exhibited metallic temperature dependence with a low resistivity of 320 μΩ cm at room temperature and 120 μΩ cm just above Tc. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1410872

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As-grown superconducting MgB2 thin films prepared by molecular beam epitaxy (2001)

Ueda, Kenji ; Naito, Michio

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 2046-2048

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Superconducting thin films of magnesium diboride (MgB2) were prepared on various substrates [SrTiO3 (001), sapphire R, sapphire C and Si (111)] by molecular beam epitaxy. The growth temperature was examined in the ambient to 650 °C. Only films formed at temperatures between 150 and 320 °C showed superconductivity. The best TConset of 36 K with a sharp transition width of ∼1 K was observed. The TC of the as-grown superconducting MgB2 thin films is close to the bulk value. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1405421

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