In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 1315 ( 2011)
Abstract:
The thermal conductivity of amorphous indium zinc oxide (IZO) thin films was measured by the 3 ω method. Three IZO films were prepared by dc magnetron sputtering method on Si substrate under different O 2 flow ratios (O 2 / [Ar+O 2 ]) of 0%, 1%, and 5%. The thermal conductivity of IZO films decreases with an increase in O 2 flow ratio, the values of the thermal conductivity were 3.4, 3.1 and 1.2 W m -1 K -1 for O 2 flow ratios of 0%, 1%, and 5%, respectively. To investigate relationships among the thermal conductivity, the structure and other physical properties, we were carried out nanoindentation, Rutherford back scattering (RBS), electron spin resonance (ESR). The result of ESR measurements indicated that the amount of conduction electron in the IZO film decreases with increasing O 2 flow ratio. Increase of O 2 flow ratio reduces the amount of oxygen vacancies for providing free electrons. Therefore, decreasing thermal conductivity with an increase in O 2 flow ratio is attributed to decreasing conduction electrons as thermal carrier. On the other hand, the chemical composition of IZO films is independent of O 2 flow ratio. Furthermore, density, Young’s modulus and hardness also show little changes with increasing O 2 flow ratio. Density, Young’s modulus and hardness are strongly associated with the internal structure. It is probable that influence of oxygen vacancies on the internal structure of IZO film is negligibly small.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/opl.2011.777
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2011
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