In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 5S ( 2016-05-01), p. 05FL02-
Abstract:
The N 2 –CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal–organic vapor phase epitaxy method. The AlN layers were annealed in N 2 and/or N 2 –CO gas atmosphere at 1923–1973 K for 0.5–4 h. Many pits and voids were observed on the AlN surface annealed in N 2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N 2 –CO gas atmosphere. The thermodynamic principle of the N 2 –CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al 2 O 3 –AlN–C–N 2 –CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.05FL02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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