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  • GEOMAR Catalogue / E-Books  (10)
  • Semimetals.  (10)
  • 1
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Electroluminescence. ; Semiconductors. ; Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (353 pages)
    Edition: 1st ed.
    ISBN: 9780080864624
    Series Statement: Issn Series
    DDC: 535.357
    Language: English
    Note: Front Cover -- Electroluminescence I -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Visible Light-Emitting Diodes -- I. Historical Overview -- II. LED Basics -- III. LED Technology -- IV. LED Performance and Related Technologies -- V. Applications of Visible LEDs -- VI. Future Trends -- References -- Chapter 2. High-Efficiency AlGaInP Light-Emitting Diodes -- I. Introduction -- II. AlGaInP Material Properties -- III. AlGaInP LED Device Design -- IV. Epitaxial Growth -- V. Device Fabrication and Packaging -- VI. AlGaInP Device Performance -- VII. Conclusions -- References -- Chapter 3. High-Brightness Nitride-Based Visible-Light-Emitting Diodes -- I. Introduction -- II. III-V Nitride Crystal Growth -- III. Electronic Properties and Characterization of III-V Nitride Films -- IV. Nitride LED Device Structures and Performance -- V. Summary and Conclusions -- References -- Chapter 4. Organic LED System Considerations -- I. Introduction -- II. Reliability Issues for Practical Application -- III. Driving Scheme -- IV. OLED Panels -- V. Summary -- References -- Chapter 5. Molecular Organic Light-Emitting Devices -- I. Overview -- II. Theory of Operation of Organic Light-Emitting Devices -- III. Improved Operation of Organic Light-Emitting Devices -- IV. Color-Tunable OLEDs in Full-Color Displays -- V. SUMMARY -- References -- Index -- Contents of Volumes in This Series.
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  • 2
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (445 pages)
    Edition: 1st ed.
    ISBN: 9780080864518
    Series Statement: Issn Series
    DDC: 621.3/8152
    Language: English
    Note: Front Cover -- Cumulative Subject and Author Index Including Tables of Contents Volumes 1-50 -- Copyright Page -- Contents -- Preface -- Subject Index -- Author Index -- Contents of Volumes 1-50.
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  • 3
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Electroluminescence. ; Semiconductors. ; Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (281 pages)
    Edition: 1st ed.
    ISBN: 9780080864631
    Series Statement: Issn Series
    DDC: 535.357
    Language: English
    Note: Front Cover -- Semiconductors and Semimetals, Volume 65 -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Polymeric and Molecular Organic Light Emitting -- I. Introduction -- II. Polymers Vs Molecular Organic Materials -- III. Polymer Led Structures -- IV. Current-Voltage-Luminance Characteristics -- V. The Good and the Bad of Organic Materials -- VI. A Light at the End of the Tunnel? -- References -- Chapter 2. Thin Film Electroluminescence -- I. Introduction -- II. Phenomenology -- III. Basic Mechanisms in Thin Film Electroluminescence -- IV. Thin Film El Devices -- Measuring TFEL -- References -- Chapter 3. Materials in Thin Film Electroluminescent Devices -- I. Introduction -- II. Device Structures and Characteristics -- III. Film Deposition Techniques -- IV. Tfel Phosphors -- V. Other Materials -- VI. Conclusions -- References -- Chapter 4. Microcavities for Electroluminescent Devices -- I. Introduction -- II. Theoretical Description -- III. Basic Examples -- IV. Applications -- V. Conclusion -- References -- Index -- Contents of Volumes in this Series.
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  • 4
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (489 pages)
    Edition: 1st ed.
    ISBN: 9780080864457
    Series Statement: Issn Series
    Language: English
    Note: Front Cover -- High Brightness Light Emitting Diodes -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Materials Issues in High-Brightness Light-Emitting Diodes -- I. Introduction -- II. Techniques for Production of III-V Semiconductors for Light-Emitting Diodes -- III. Selection of Materials for High-Brightness Light-Emitting Diodes -- IV. Fundamental Thermodynamicand Kinetic Considerations -- V. Specific Materials Systems -- VI. Conclusions -- References -- Chapter 2. Overview of Device Issues in High-Brightness Light-Emitting Diodes -- I. Introduction -- II. Light-Emitting Diode Device Issues -- III. Technology Status and Future Potential -- References -- Chapter 3. AlGaAs Red Light-Emitting Diodes -- I. Introduction -- II. Device Design -- III. Crystal Growth -- IV. Device Fabrication -- V. Comparison with Other Types of Red Light-Emitting Diodes -- VI. Temperature-Dependent Properties -- VII. Reliability Characteristics. -- References -- Chapter 4. OMVPE Growth of AlGaInP for High-Efficiency Visible Light-Emitting Diodes -- I. Introduction -- II. General Overview of Organometallic Vapor-Phase Epitaxy of AlGaInP -- III. Organometallic Vapor-Phase Epitaxy of AlGaInP-Critical Issues -- IV. High-Volume Manufacturing Issues -- V. Summary -- References -- Chapter 5. AlGaInP Light-Emitting Diodes -- I. Introduction -- II. Active Layer Design -- III. Current-Spreading in Device Structures -- IV. Current-Blocking Structures -- V. Light Extraction -- VI. Wafer Fabrication Techniques -- VII. Device Performance Characteristics -- VIII. Conclusions and Outlook. -- References -- Chapter 6. Applications for High-Brightness Light-Emitting Diodes -- I. Introduction -- II. Photometry and Color Measurement Principles -- III. Automotive Signal Lighting -- IV. Automotive Interior Lighting. -- V. Traffic Signal Lights. , VI. Large-Area Displays -- VII. Liquid Crystal Display Backlighting -- References -- Chapter 7. Organometallic Vapor-Phase Epitaxy of Gallium Nitride for High-Brightness Blue Light-Emitting Diodes -- I. Introduction -- II. Historical Overview -- III. Design and Structure of Nitride-Based Superbright Light-Emitting -- IV. Efficiency, Wavelength, and Lifetime -- V. Laser Diodes -- VI. Summary -- References -- Chapter 8. Group III-V Nitride-Based Ultraviolet Blue-Green-Yellow Light-Emitting Diodes and Laser Diodes -- I. Introduction -- II. Gallium Nitride Growth -- III. InGaN Growth -- IV. Light-Emitting Diodes -- V. InGaN Multiple Quantum Well Structure Laser Diodes -- VI. Summary -- References -- Index -- Contents of Volumes in this Series.
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  • 5
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (369 pages)
    Edition: 1st ed.
    ISBN: 9780080864464
    Series Statement: Issn Series
    Language: English
    Note: Front Cover -- Light Emission in Silicon: From Physics to Devices -- Copyright Page -- Contents -- List of Contributors -- Abstract -- Preface -- Chapter 1. Light Emission in Silicon -- I. Introduction -- II. The Optoelectronic Age -- III. Physical Properties of Si -- IV. Methods for Overcoming the Indirect Bandgap Limitations in Si -- V. Prospects for Si Based Optoelectronic Devices -- References -- Chapter 2. Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures -- I. Introduction -- II. Structural Properties -- Ill. Bandgaps, Band Offsets, and Brillouin Zone Folding -- IV. Photoluminescence, Electroluminescence, and Photocurrent Measurements -- V. Concluding Remarks -- Acknowledgments -- References -- Chapter 3. Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices -- I. Introductory Concepts -- II. Isoelectronic Bound Exciton Emission from c-Si -- III. Isoelectronic Bound Exciton Emission in Be-Doped SiGe Alloys: A Case Study -- IV. Device Considerations -- V. Concluding Remarks -- References -- Chapter 4. Erbium in Silicon -- I. Introduction -- II. Er Doping of Si -- III. Diffusivity and Solubility -- IV. Light Emission -- V. Electronic Structure -- VI. Light Emitting Diode Design -- VII. Summary -- Acknowledgments -- References -- Chapter 5. Silicon and Germanium Nanoparticles -- I. Introduction -- II. Fabrication of Silicon (Si) and Germanium (Ge) Nanoparticles -- III. Photoluminescence Mechanism -- IV. Unique Optical Phenomena -- V. Summary -- Acknowledgments -- References -- Chapter 6. Porous Silicon: Photoluminescence and Electroluminescent Devices -- I. Introduction -- II. Properties of the PL Bands -- III. Origin of the Intrinsic PL Bands -- IV. Pure Quantum Confinement and Surface States: A Critical Discussion -- V. Nonoptical Properties -- VI. Electroluminescent Devices. , VII. Conclusions and Outlook -- Chapter 7. Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites -- I. Introduction -- II. Electronic Properties -- III. Optical Transitions and Radiative Lifetime -- IV. Exchange Splitting and Symmetry of the Crystallites -- V. Atomic Relaxation, Stokes Shift, and Self-trapped Exciton -- VI. Nonradiative Recombination -- VII. Screening in Nanocrystallites and Coulomb Charging Effects -- VIII. Conclusion -- References -- Chapter 8. Silicon Polymers and Nanocrystals -- I. Introduction -- II. Silicon Polymers in One, Two, and Three Dimensions -- III. Passivated Silicon Nanocrystals -- IV. Electron Transport in Porous Nanocrystal Materials -- Acknowledgments -- References -- Index -- Contents of Volumes in This Series.
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  • 6
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (593 pages)
    Edition: 1st ed.
    ISBN: 9780080864525
    Series Statement: Issn Series
    Language: English
    Note: Front Cover -- High Pressure in Semiconductor Physics I -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. High Pressure in Semiconductor Physics: A Historical Overview -- I. Introduction -- II. Experiments on Bulk Samples of the Zincblende Family to 1970 -- III. Theoretical Calculations of the Effect of Pressure on Bulk Band Structures -- IV. Current Studies of Bulk Semiconductors of the Zincblende Family -- V. Quantum Wells, Heterostructures, and Superlattices -- VI. Structural Phase Transitions -- VII. Other Materials -- VIII. Other Matters -- References -- Chapter 2. Electronic Structure Calculations for Semiconductors under Pressure -- I. Introduction -- II. BasicTheory -- III. "ASA-LDA." "Frozen-Potential Method" -- IV. Deformation Potentials -- V. Pressure-Induced Structural Changes -- Vl. Pressure Dependence of Phonon Frequencies -- VII. Concluding Remarks -- References -- Chapter 3. Structural Transitions in the Group IV, III-V and II-VI Semiconductors Under Pressure -- I. Introduction -- II. Structures -- III. Individual Systems -- IV. Discussion -- V. Concluding Remarks -- Chapter 4. Optical Properties of Semiconductors Under Pressure . -- I. Introduction -- II. Experimental Aspects -- III. Electronic Band Structure Under Pressure -- IV. Refractive Index Dispersion -- V. Optical Absorption Near the Fundamental Gap -- VI. Effect of Pressure on Exciton Absorption -- VII. Photoluminescence Studies Under Pressure -- VIII. Photomodulated Reflectance -- IX. Optical Properties of Electron Gases Under Pressure -- X. High Pressure Phases -- Acknowledgments -- References -- Chapter 5. Defects -- Chapter 5.1 Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs -- I. Introduction -- II. Basic Properties of the EL2 Defect -- III. Piezospectroscopic Investigations of No-Phonon Lines of EL2. , IV. Studies of the EL2 Defect Under Hydrostatic Pressure -- V. Microscopic Nature of the Metastable State of EL2 -- VI. Conclusions -- References -- Chapter 5.2 High-pressure Study of DX Centers Using Capacitance Techniques -- I. Introduction -- II. Techniques for Electrical Measurements on Samples Inside the DAC -- III. Introduction to Capacitance Transient Techniques -- IV. Experimental Studies of DX Centers -- V. Concluding Remarks -- Acknowledgments -- References -- Chapter 5.3 Spatial Correlations of Impurity Charges in Doped Semiconductors -- I. Introduction -- II. Experimental Techniques -- III. Donor-charges in HgSe : Fe -- IV. Donor States in GaAs and AlGaAs -- V. Experimental Studies of Spatial Correlations for DX-center Charges in Bulk Semiconductors -- VI. Spatial Correlations of Remote Impurity Charges -- VII. Remote-Charge Correlations and Quantum Transport of 2 DEG -- VIII. Concluding Remarks -- References -- Chapter 6 Pressure Effects on the Electronic Properties of Diluted Magnetic Semiconductors -- I. Introduction -- II. Structural Properties -- III. Electronic Properties -- IV. Superstructures -- V. Miscellaneous -- Acknowledgments -- References -- Index -- Contents of Volumes in This Series.
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  • 7
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semiconductors. ; Semimetals. ; Quantum theory. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (139 pages)
    Edition: 1st ed.
    ISBN: 9780080963402
    Series Statement: Issn Series
    Language: English
    Note: Front Cover -- Quantum Efficiency in Complex Systems, Part I: Biomolecular systems -- Copyright -- Table of Contents -- Foreword -- List of Contributors -- Chapter 1. Transport and Entanglement -- 1. Coherent Transport in Disordered Systems -- 2. Many-Body Coherence and Entanglement -- 3. Fast and Efficient Transport in Molecular Networks -- 4. Conclusions -- Appendix -- References -- Chapter 2. Quantum Coherence and Entanglement in Photosynthetic Light-Harvesting Complexes -- 1. Excitonic Energy Transfer in Photosynthetic Light-Harvesting Complexes -- 2. Bath-Sustained Quantum Coherence in a Single Exciton Pair -- 3. Bath-Sustained Quantum Entanglement of Two Chromophore Pairs -- 4. Role of Spatial Correlations -- 5. Conclusions -- Appendices -- References -- Chapter 3. Sunlight, Purple Bacteria, and Quantum Mechanics: How Purple Bacteria Harness Quantum Mechanics for Efficient Light Harvesting -- 1. Introduction -- 2. The Light-Harvesting Apparatus of Purple Bacteria -- 3. Frenkel Excitons -- 4. Linear versus Cyclic Aggregate: A Comparison -- 5. The B850 Assembly of LH2 as a Quantum Aggregate of Molecules -- 6. Can We Learn from Nature how to Synthesise Artificial Light-Harvesting Molecules? -- Acknowledgments -- References -- Index -- Contents of Volumes in this Series -- Color Plates.
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  • 8
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (393 pages)
    Edition: 1st ed.
    ISBN: 9780080864488
    Series Statement: Issn Series
    DDC: 540.922
    Language: English
    Note: Front Cover -- Identification of Defects in Semiconductors -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. EPR and ENDOR Studies of Defects in Semiconductors -- I. Introduction -- II. The EPR/ENDOR Experiment -- III. Theory of EPR and ENDOR -- IV. Additional Examples -- V. Auxiliary Techniques -- Chapter 2. Magneto-Optical and Electrical Detection of Paramagnetic Resonance in Semiconductors -- I. Introduction -- II. Magneto-Optical Detection of EPR and ENDOR -- III. Electrical Detection of EPR (EDEPR) -- IV. Electrical Detection of ENDOR (EDENDOR) -- V. New Possibilities -- References -- Chapter 3. Magnetic Resonance of Epitaxial Layers Detected by Photoluminescence -- I. Introduction -- II. Fundamentals of ODMR and Epitaxy -- III. Illustrative Example: Bulk InP:Zn -- IV. Examples in Epilayers -- V. Summary and Future Directions -- References -- Chapter 4. μSR on Muonium in Semiconductors and Its Relation to Hydrogen -- I. Introduction -- II. Fundamentals of μSR in Semiconductors -- III. Experimental Techniques and Examples -- IV. Summary -- References -- Chapter 5. Positron Annihilation Spectroscopy of Defects in Semiconductors -- I. Introduction -- II. Positrons in Solids -- III. Positron Trapping -- IV. Experimental Techniques -- V. Identification of Vacancies and Their Charge States -- VI. Negative Ions as Shallow Positron Traps -- VIl. Defects in Layers Studied by a Low-Energy Positron Beam -- VIII. Investigation of Vacancy Ionization Levels -- IX. Investigation of the Atomic Structures of Metastable Defects -- X. Summary -- References -- Chapter 6. The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors -- I. Introduction -- II. The Many-Body Problem -- III. Pseudopotential Theory -- IV. The Real-Space Cluster Method -- V. Self-Consistency and Atomic Forces -- VI. Structural Optimization. , VII. Determination of Vibrational Modes -- VIII. Practical Considerations -- IX. Applications -- X. Summary -- References -- Index -- Contents of Volumes in This Series.
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  • 9
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (445 pages)
    Edition: 1st ed.
    ISBN: 9780080864563
    Series Statement: Issn Series
    DDC: 621.3/8152
    Language: English
    Note: Front Cover -- Nonlinear Optics in Semiconductors I -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Resonant Optical Nonlinearities in Semiconductors -- I. Introduction -- II. Survey of Nonlinear Optical Mechanisms -- III. Modeling And Measuring Optical Nonlinearity -- IV. Resonant Optical Nonlinearity in GaAs Quantum Wells -- V. Summary of Band-Filling Nonlinearities -- VI. Figure of Merit -- VII. Optical Nonlinearity From Free Carrier Absorption and Refraction -- VIII. Optothermal Optical Nonlinearities -- IX. All-Optical Switching -- X. Summary and Conclusions -- List of Abbreviations and Acronyms -- References -- Chapter 2. Optical Nonlinearities in Semiconductors Enhanced by Carrier Transport -- List of Acronyms -- I. Introduction -- II. Experimental Results on Optical Nonlinearities Influenced by Carrier Transport -- III. Field Dependence of The Optical Properties of Semiconductors -- IV. Experimental Configurations -- V. Characteristics of Experimental Devices That Utilize Self-Modulation -- References -- Chapter 3. Ultrafast Transient Nonlinear Optical Processes in Semiconductors -- I. Introduction -- II. Near-Band-Gap Excitations -- III. Time Scales and Dynamic Trends -- IV. A Purely Coherent Process Involving Only Virtual Electron-Hole Pairs: The Excitonic Optical Stark Effect -- V. Fundamentals of Two-particle Correlation Effects Involving Real Electron-Hole Pairs -- VI. Applications: Spectroscopy and Dynamics of Electronic States in Heterostructures -- VII. Fundamentals of Four-Particle Correlation Effects Involving Real Electron-Hole Pairs -- VIII. Dynamics in The Quantum Kinetics Regime -- IX. Conclusion -- List of Abbreviations and Acronyms -- References -- Chapter 4. Optical Nonlinearities in The Transparency Region of Bulk Semiconductors -- I. Introduction -- II. Background. , III. Theory of Bound-Electronic Nonlinearities: Two-Band Model -- IV. Bound-Electronic Optical Nonlinearities in Active Semiconductors -- V. Free-Carrier Nonlinearities -- VI. Experimental Methods -- VII. Applications -- VIII. Conclusion -- List of Abbreviations and Acronyms -- References -- Chapter 5. Photorefractivity in Semiconductors -- I. Introduction -- II. Space-Charge Grating Formation -- III. Beam Coupling -- II. Four-Wave Mixing -- V. Enhanced Wave-Mixing Techniques -- VI. Bulk Semiconductors -- VII. Multiple Quantum Wells -- VIII. Selected Applications -- List of Abbreviations and Acronyms -- References -- Index -- Contents of Volumes in This Series.
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  • 10
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Semiconductors. ; Semimetals. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (353 pages)
    Edition: 1st ed.
    ISBN: 9780080864419
    Series Statement: Issn Series
    Language: English
    Note: Front Cover -- II-VI Blue/Green Light Emitters: Device Physics and Epitaxial Growth -- Copyright Page -- Contents -- List of Contributors -- Foreword -- Chapter 1. MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors -- I. Introduction -- II. MBE Growth of ZnSe-based alloys -- III. The ZnSe/GaAs Heterovalent Interface -- IV. Electrical Contact to p-ZnSe -- V. p-Type Doping of ZnSe-based Alloys -- VI . Conclusion -- References -- Chapter 2. Growth and Characterization of ZnSe-based II-VI Semiconductors by MOVPE -- I. Introduction -- II. Brief Review of Pioneering Works -- III. Recent Growth Techniques -- IV. Doping and Devices -- References -- Chapter 3. Gaseous Source UHV Epitaxy Technologies for Wide Bandgap II-VI Semiconductors -- I. Introduction -- II. Metalorganic Molecular Beam Epitaxy of ZnSe -- III. Gas Source Molecular Beam Epitaxy -- IV. Concluding Remarks -- References -- Chapter 4. Doping of Wide-band-gap II-VI Compounds - Theory -- I. Introduction -- II. Mechanisms that Limit Doping -- III. Formalism for Calculating Doping Levels -- IV. Native Defects -- V. p-Type Doping -- VI. n-Type Doping -- VII. Comparison between Theory and Experiment -- VIII. Conclusions and Future Directions -- References -- Chapter 5. Optical Properties of Excitons in ZnSe-based Quantum Well Heterostructures -- I. Introduction -- II. Modeling Excitonic States in II-VI Quantum Wells -- III. Linear Optical Properties of Quasi-two-dimensional Exciton -- IV. Nonlinear Excitonic Properties -- V. Role of Excitons in the Lasing of ZnSe-based Quantum Wells -- VI. Conclusions -- References -- Chapter 6. II-VI Diode Lasers: A Current View of Device Performance and Issues -- I. Introduction -- II. Designs Considerations -- III. Diode Laser Performance and Characteristics. , IV . Physics of Gain and Stimulated Emission in ZnSe-based Quantum Well Lasers -- V. Summary -- References -- Chapter 7. Defects and Degradation in Wide-gap II-VI-based Structures and Light-emitting Devices -- I. Introduction -- II. Structural Characteristics -- III. Degradation Effects -- References -- Index -- Contents of Volumes in This Series.
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