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  • American Institute of Physics (AIP)  (20)
  • The American Society for Biochemistry and Molecular Biology (ASBMB)  (4)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 434-444 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Cs(7P)+H2→CsH (X 1Σ+) (v‘=0,J‘)+H reaction has been studied in a crossed-beam experiment, with electronic excitation of Cs atoms and laser-induced fluorescence detection of CsH products. The Doppler technique has been applied to determine the center of mass angular scattering probability of CsH products, for all rotational levels between 1 and 14 (in v‘=0) and for various values of the collision energy between 0.03 and 0.13 eV. We have used two complementary arrangements of the analysis laser beam: With a "parallel'' arrangement (the laser beam is along the collision axis), the shape analysis of fluorescence profiles leads directly to the angular scattering probability but experimental constraints limit the range of measurements; with a "perpendicular'' arrangement (the laser beam is perpendicular to the collision plane), fluorescence profiles are symmetrical and "forward'' contributions cannot be separated from "backward'' ones. However, extensive shape analyses have been performed with this perpendicular arrangement, since the direction of scattering was determined earlier by recording several profiles with the parallel arrangement. For the title reaction, it is shown unambiguously that, in the center of mass, CsH products scatter preferentially at small angle, in the forward direction with respect to the Cs initial velocity. The angular scattering probability varies with the collision energy but is independent of the rotational level of the product molecule (thus of its recoil velocity). These results are compatible with the harpooning mechanism which was suggested for the reaction.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 3347-3360 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Cs(7P)+H2→CsH(X 1Σ+)(v‘=0,J‘)+H harpooning reaction has been studied in a crossed-beam experiment, with electronic excitation of Cs atoms and laser-induced fluorescence detection of CsH products performed in a coherent saturation regime. Measurements of reactive cross sections have been achieved as a function of two parameters: The collision energy Ec (0.015≤Ec≤0.15 eV) and the rotational quantum number J‘ of CsH products (0≤J‘≤16, in v‘=0). For Ec=0.09 eV, the total reactive cross sections corresponding to the two 7P fine structure levels of Cs are σ(Cs(7P1/2)+H2)=4.2×10−16 cm2 and σ(Cs(7P3/2)+H2)=10−16 cm2. These cross sections are much smaller than expected for a harpooning reaction. This is interpreted from ab initio potential energy and quantal dynamics calculations which show that the efficiency of the photochemical reaction (Cs atoms in the 7P state) is limited by the quenching processes associated with the underlying potential energy surfaces connected with Cs atoms in the 6S, 6P, 5D, and 7S states. From the present measurements, one deduces that the rate of these quenching processes is larger than 90%. The rotational distributions of products in v‘=0 measured at two collision energies (Ec=0.045 and 0.09 eV) are close to "prior'' statistical distributions, with the same "surprisal.'' The energy dependence of rotationally resolved cross sections (J‘ fixed, Ec variable) confirms the reaction thresholds and shows that there is no potential barrier higher than 0.015 eV on the entrance valley and the exit valley of the reactive system; it is in agreement with the dependence predicted by hemiquantal dynamical calculations performed in the frame of a harpooning model. The uncertainty on the measurement of absolute cross sections is larger than 70%, but of the order of 20% for relative cross sections.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1046-1052 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were measured to determine the Li lattice sites. The alpha emission channeling spectra measured along different crystallographic directions reveal that Li occupies mainly interstitial sites with tetrahedral symmetry, centered along the c-axis atom rows in the hexagonal lattices. In the cubic 3C-SiC structure, Li is located on tetrahedral interstitial sites as well. For 6H-SiC, the implantation temperature was varied between 200 and 823 K without observing significant changes in the emission channeling spectra. Thus, Li diffusion or Li defect interaction resulting in a lattice site change does not occur in this temperature regime. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4237-4245 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth and the properties of (t)a-C:F films prepared by the deposition of mass separated 12C+ and 19F+ ions as a function of the F concentration. The films are always strongly F deficient due to the formation of volatile F2 and CFx molecules during the deposition process. A maximum F content of about 25 at. % is obtained for an ion charge ratio of C+:F+=1:1. The observed mechanical, optical, electrical, and structural properties as well as the thermal stability of the films are strongly influenced by the F content. A three step progression of the film structure is evident for increasing F concentration: the amorphous three-dimensional network of tetrahedrally bonded carbon atoms of pure carbon films (ta-C) with diamondlike properties is doped for very low F concentrations (ta-C:F). A further increase of the F content results first in transformation to a graphitelike amorphous structure (a-C:F) before the deposited films become porous and to a polymerlike one for the highest F content. © 2001 American Institute of Physics.
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical currents of YBa2Cu3O7−δ bulk-sintered samples were measured at and above 77 K in the presence of magnetic fields. In moderate magnetic fields a H−n dependence with n〈1 was observed. Transport measurements give n(approximately-equal-to)0.5, indicating that critical currents are limited by flux creep rather than by field quenching of Josephson junctions.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2149-2157 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of 111In+ and 89Sr+ in the dose range (0.1–3) 1013 cm−2 and ion energies of 60–400 keV has been investigated as a function of annealing temperature with emission channeling (EC) and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites in heavily perturbed surroundings of point defects after room temperature implantation. No amorphization of the lattice structure was observed. The point defects could be partly removed after annealing to 1473 K for 10–30 min. Lattice site occupation of implanted light alkalis, 24Na+ in GaN and AlN as well as 8Li+ in AlN, were also determined by EC as a function of implantation and annealing temperature. These atoms occupied mainly interstitial sites at room temperature. Lithium diffusion and the occupation of substitutional sites was observed in GaN and AlN at implantation temperatures above 700 K. A lattice site change was also observed for sodium in AlN, but not in GaN after annealing to 1073 K for 10 min. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3085-3089 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice sites of ion implanted Li atoms in GaN were studied as a function of implantation temperature between room temperature and 770 K. We measured the channeling and blocking patterns of α-particles emitted in the radioactive decay of implanted 8Li ions to determine the Li lattice sites. Below 700 K Li atoms occupy mainly interstitial sites in the center of the c-axis hexagons at positions c/4 and 3c/4, where c is the lattice constant in c-axis direction. Around 700 K Li starts to diffuse and presumably interacts with vacancies created in the implantation process. This leads to the formation of substitutional Li above 700 K. An activation energy of about 1.7 eV for interstitial Li diffusion was determined. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 363-368 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A setup for pulse radiolysis experiments is described consisting of the following main components: an array of 15 photomultipliers attached to a spectrograph (allowing 4032 spectra to be recorded with a time resolution of 500 ns per spectrum), self-regulating high-voltage supply for the photomultipliers, computer-controlled solution mixing and dispensing system, and provisions for continuous dose variation of the FEBETRON-accelerator electron beam. The general performance of the system is discussed and construction or electronic details are given for special components.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 353-355 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of powerful x-ray imaging techniques using white-beam synchrotron radiation have been developed and applied to clearly reveal and map micropipes in SiC crystals at a "magnified" level. The experimental results and the corresponding simulations demonstrate explicitly that the micropipes are pure superscrew dislocations (SSDs). Moreover, these techniques provide accurate descriptions of the detailed structure of the SSDs, including the spatial distribution of the strain fields, the magnitudes of the Burgers vectors, the dislocation senses, and the surface relaxation effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 3973-3980 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Multireference configuration interaction calculations (MRD-CI) were carried out in order to obtain the bending and stretching potential energy curves of several low-lying electronic states of the fluoroformyl radical FCO. The study of interactions between valence and Rydberg states as well as that of the dissociative behavior is included in the investigation.
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