In:
Journal of Applied Crystallography, International Union of Crystallography (IUCr), Vol. 53, No. 1 ( 2020-02-01), p. 58-68
Kurzfassung:
Silicon nanowire-based sensors find many applications in micro- and nano-electromechanical systems, thanks to their unique characteristics of flexibility and strength that emerge at the nanoscale. This work is the first study of this class of micro- and nano-fabricated silicon-based structures adopting the scanning X-ray diffraction microscopy technique for mapping the in-plane crystalline strain (ɛ 044 ) and tilt of a device which includes pillars with suspended nanowires on a substrate. It is shown how the micro- and nanostructures of this new type of nanowire system are influenced by critical steps of the fabrication process, such as electron-beam lithography and deep reactive ion etching. X-ray analysis performed on the 044 reflection shows a very low level of lattice strain ( 〈 0.00025 Δ d / d ) but a significant degree of lattice tilt (up to 0.214°). This work imparts new insights into the crystal structure of micro- and nanomaterial-based sensors, and their relationship with critical steps of the fabrication process.
Materialart:
Online-Ressource
ISSN:
1600-5767
DOI:
10.1107/S1600576719015504
DOI:
10.1107/S1600576719015504/ks5638sup1.mp4
DOI:
10.1107/S1600576719015504/ks5638sup2.mp4
DOI:
10.1107/S1600576719015504/ks5638sup3.mp4
DOI:
10.1107/S1600576719015504/ks5638sup4.pdf
Sprache:
Unbekannt
Verlag:
International Union of Crystallography (IUCr)
Publikationsdatum:
2020
ZDB Id:
2020879-0
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