In:
IOP Conference Series: Materials Science and Engineering, IOP Publishing, Vol. 556, No. 1 ( 2019-07-01), p. 012011-
Kurzfassung:
As for it higher band gap, Cd 1-x Mg x Te (CMT) material has been taken into consideration to improve the open-circuit voltage of CdTe solar cells as an electron reflector layer. An essential step in the development of this new interlayer is the passivation process. X-ray Diffraction (XRD) and scanning electron microscope (SEM) results give us the suitable annealing temperature range of CMT thin films from 350°C to 400°C, and suggest that the annealing process is beneficial to grain growth and recrystallization. The concentration of CdCl 2 solution has an influence on the crystallinity of the thin films and coating method would contribute to electrical performance of the devices. The CMT/CdTe cells which underwent the two-step annealing procedure at high purity nitrogen atmosphere showed the significant improvements in device performance. Furthermore, the CdTe solar cells with the CdTe cap layer and Te/Cu back contacts also demonstrated higher performance.
Materialart:
Online-Ressource
ISSN:
1757-8981
,
1757-899X
DOI:
10.1088/1757-899X/556/1/012011
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2019
ZDB Id:
2506501-4
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