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  • American Vacuum Society  (4)
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  • American Vacuum Society  (4)
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  • 1
    Online Resource
    Online Resource
    Subband related structure in the absorption coefficient of HgTe/CdTe superlattices
    American Vacuum Society ; 1987
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 5, No. 5 ( 1987-09-01), p. 3102-3106
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 5, No. 5 ( 1987-09-01), p. 3102-3106
    Abstract: The current interest in HgTe/CdTe superlattices (SL’s) stems in part from their potential usefulness in advanced IR applications. Of particular interest is the photon energy dependence of the optical absorption coefficient α(E) of these superlattices. Structure in α(E) of superlattices is expected because of the relatively narrow energy subbands (compared with bulk semiconductors) resulting from the large SL period (∼100 Å). Determination of this structure will help to reveal the electronic subband structure of the superlattice. We report here the experimental and theoretical extraction of α(E) at 300 K for six HgTe/CdTe superlattices. The experimentally determined αexp(E) were obtained from transmission/reflection data in conjunction with a computer model. The theoretically calculated αcalc(E) was computed using a two-band tight-binding model for the superlattice energy bands in the growth direction and a nonparabolic approximation in the superlattice plane. Subband related structure is observed for all six superlattices with excellent agreement between theory and experiment for three of the superlattices. The level of correlation between αexp(E) and αcalc(E) appears to be an indicator of superlattice quality as defined by results from x-ray and far-infrared spectroscopy studies.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.574225
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1987
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Optical properties of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy
    American Vacuum Society ; 1986
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 4, No. 2 ( 1986-03-01), p. 525-527
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 4, No. 2 ( 1986-03-01), p. 525-527
    Abstract: A detailed characterization of the optical properties of GaAs/AlGaAs multiple quantum well heterostructures has been performed at superfluid helium temperatures using photoluminescence, optical transmission, and reflectance techniques yielding complementary information. We present the first report of experimentally determined absolute absorption spectra obtained from optical transmission spectra. Exciton absorption features become strongly enhanced as the wells get narrower. Theoretical calculations of the quantum energy levels correlate well with experimental observations. Reflectance spectra revealing structure of greater detail than that observed in luminescence have permitted the observation of free exciton splitting attributed to submonolayer well width fluctuations.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.583417
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1986
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 3
    Online Resource
    Online Resource
    Summary Abstract: HgTe–CdTe: A type-III superlattice?
    American Vacuum Society ; 1986
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 4, No. 4 ( 1986-07-01), p. 2114-2116
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 4, No. 4 ( 1986-07-01), p. 2114-2116
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.574038
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1986
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices
    American Vacuum Society ; 1982
    In:  Journal of Vacuum Science and Technology Vol. 21, No. 2 ( 1982-07-01), p. 540-543
    Details
    In: Journal of Vacuum Science and Technology, American Vacuum Society, Vol. 21, No. 2 ( 1982-07-01), p. 540-543
    Abstract: A new theoretical technique for calculating the electronic properties of heterostructures is presented. This method is computationally more efficient than any current technique and has physically intuitive clarity. Furthermore, it can be applied to heterostructures with arbitrary perturbations varying in the direction perpendicular to the interface, such as smoothly varying electrostatic potentials caused by doping, compositional grading disruptions, and long range lattice relaxations. Using this method, we have studied several semiconductor surfaces, interfaces, and superlattices, including doping and relaxation effects in a realistic tight-binding model. The results for the Si (111)–(2×1) surface and the GaAs/AlAs interface with doping are presented.
    Type of Medium: Online Resource
    ISSN: 0022-5355
    URL: Article
    DOI: 10.1116/1.571756
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1982
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