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  • American Vacuum Society  (8)
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  • American Vacuum Society  (8)
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  • 1
    Online Resource
    Online Resource
    Silicon surface cleaning by oxidation with electron cyclotron resonance oxygen plasma after contact hole dry etching
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 13, No. 3 ( 1995-05-01), p. 902-907
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 3 ( 1995-05-01), p. 902-907
    Abstract: A simple technique for cleaning a silicon surface after contact hole etching is proposed for obtaining stable p+ silicon contact characteristics for very large scale integrated interconnections. The contaminated layer of the silicon contact surface after dry etching is first oxidized with electron cyclotron resonance (ECR) oxygen plasma and then the surface oxide is removed by wet etching with diluted HF. X-ray photoemission spectroscopy and secondary-ion-mass spectroscopy analyses show that one of the main reasons for the instability of the p+ silicon contact is fluorine contamination, which can be removed controllably by ECR oxygen plasma treatment followed by wet etching. This surface oxidation technique with ECR oxygen plasma is, therefore, an effective way to obtain stable and low-resistance p+ contact characteristics.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.588203
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 2
    Online Resource
    Online Resource
    Metal–insulator–metal capacitors by using electron cyclotron resonance plasma-SiO2
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 13, No. 5 ( 1995-09-01), p. 2013-2015
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 5 ( 1995-09-01), p. 2013-2015
    Abstract: This paper describes the fabrication process and the reliable characteristics of a metal–insulator–metal capacitor using electron cyclotron resonance plasma-SiO2 as an insulator film. The metal–insulator–metal capacitors are additionally fabricated during the Al multilevel interconnection process since the deposition temperature of electron cyclotron resonance plasma-SiO2 is below 200 °C. Also, the leakage current characteristics of the film are excellent even without densification at high temperature. The experimental results confirm that a metal–insulator–metal capacitor fabrication process using electron cyclotron resonance plasma-SiO2 can be applied to analog large scale integration implementation.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.588125
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Estimation of charge buildup during plasma processing by measuring metal–oxide thickness
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 13, No. 3 ( 1995-05-01), p. 889-894
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 3 ( 1995-05-01), p. 889-894
    Abstract: A simple method for estimating charge buildup on gate oxide during plasma processing is proposed. This method is based on the observation that metal oxidation rate at the SiO2–metal interface is accelerated by the electric field formed by electrons diffused from the SiO2 surface to the metal surface during plasma processing. The thickness of the metal oxide caused by electron-induced charge buildup can be estimated by ellipsometry analysis. We applied the method to biased electron cyclotron resonance (ECR) plasma deposition of SiO2, compared the metal oxidation enhancement for biased ECR plasma deposition with that for exposing electron beams directly and also compared with the injected charge density Qinj for gate–oxide breakdown during biased ECR plasma deposition evaluated by time-dependent dielectrics breakdown measurements. In this way, we clarify that (i) the oxidation enhancement takes place at an electron-beam exposure of over 10 C/cm2, and (ii) the Qinj of over 10 C/cm2 is closely related to gate–oxide breakdown. These results confirm that the metal–oxide thickness is strongly associated with the degradation in gate–oxide yield related to the injected electrons and that the charge buildup damage is caused by electrons diffused during biased ECR plasma deposition.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.588201
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Charge build-up reduction during biased electron cyclotron resonance plasma deposition
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 13, No. 5 ( 1995-09-01), p. 2004-2007
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 5 ( 1995-09-01), p. 2004-2007
    Abstract: A technique to reduce charge buildup causing gate-oxide deterioration during biased electron cyclotron resonance (ECR) plasma deposition has been developed. For SiO2 planarization and filling techniques, it is necessary to resolve the charge build-up phenomenon with the biased ECR plasma system. The deterioration is reduced by adjusting the magnet-coil position in the ECR plasma system which means minimizing the magnetic-flux density at the specimen surface.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.588123
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 5
    Online Resource
    Online Resource
    Highly sensitive analytical method for metallic impurities in the thin silicon layer of silicon-on-insulator wafer
    American Vacuum Society ; 1997
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 15, No. 1 ( 1997-01-01), p. 171-173
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 15, No. 1 ( 1997-01-01), p. 171-173
    Abstract: A new analytical method for thin Si layer is proposed that uses low temperature oxidation and chemical analysis. The thin Si layer of silicon-on-insulator wafers is oxidized at a low temperature by electron cyclotron resonance oxygen plasma. The oxide is analyzed by vapor phase decomposition method and atomic absorption spectrometry. This approach makes it possible to analyze metallic impurities without the diffusion of contaminants because the oxidation is carried out at a low temperature. The results reveal that metallic impurity concentrations below 1010 atoms/cm2 can be detected with a depth resolution of 4 nm.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.589244
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1997
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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  • 6
    Online Resource
    Online Resource
    Characterization of thin SiN film formed with electron cyclotron resonance nitrogen plasma
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 13, No. 3 ( 1995-05-01), p. 876-880
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 3 ( 1995-05-01), p. 876-880
    Abstract: An extremely thin SiN film formed with electron cyclotron resonance (ECR) nitrogen plasma has been measured by x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), ellipsometry, and electron spin resonance (ESR). The XPS and AES results show that the SiN layer is easily formed on a silicon surface by ECR nitrogen plasma, and it has a structure with high nitrogen content similar to Si3N4 only near the surface of the film. The ellipsometry and ESR results reveal that the SiN film is very thin, 2.5–4.0 nm, and has spin density in the order of 1013 cm−2, which is reduced drastically by exposing it to hydrogen plasma. The SiN film can be applied to the inexpensive dual-polycide-gate complementary metal–oxide–semiconductor process.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.588199
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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    Online Resource
  • 7
    Online Resource
    Online Resource
    Novel global planarization technology for interlayer dielectrics using spin on glass film transfer and hot pressing
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 3 ( 1998-05-01), p. 1093-1097
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1093-1097
    Abstract: Global planarization technology based on a new concept comprised of spin on glass (SOG) film transfer and hot pressing is proposed for interlayer dielectrics. The technology basically involves coating a SOG film onto a sheet film in advance and then transferring it from the sheet film to a Si substrate by pressing and heating it in a vacuum. Planarization and filling of the interlayer dielectrics can be carried out by this process. For this technology, perhydrosilazane, which has a high viscosity for a thick formation during coating and a low viscosity for the flow during heating, is used as the SOG material. Experimental results show that the SOG thickness is reduced by the pressing and heating process and that its uniformity can be improved by the press force. By applying this technology to Al interconnection, it is found that planarization and filling can be completely realized. Therefore, this technology is very promising for simple and inexpensive global planarization.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590014
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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  • 8
    Online Resource
    Online Resource
    Silicidation using electron cyclotron resonance plasma
    American Vacuum Society ; 1992
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 10, No. 3 ( 1992-05-01), p. 1087-1090
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 10, No. 3 ( 1992-05-01), p. 1087-1090
    Abstract: A new annealing technique for silicidation using electron cyclotron resonance plasma is proposed, and the method is successfully used to apply self-aligned silicide of molybdenum on a Si substrate. The technique enables the temperature to be rapidly increased above 500 °C independent of substrate materials and a high degree of controllability enables reliable, self-aligned silicidation on Si.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.586083
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1992
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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