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  • 1
    Electronic Resource
    Electronic Resource
    Self-trapped state and phonon localization in TiO2 quantum dot with a dipole layer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4689-4690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discrete phonon spectra of TiO2 quantum dot with a dipole layer is reported. The absorption intensities of different LO phonons are related to the phonon-electron coupling in accord with the prediction of the continuum polarization model. The two-phonon bound state appeared due to the localization effect. The optical absorption of the self-trapped state [reported in Appl. Phys. Lett. 59, 1826 (1991)] may be related to the strong electron-phonon interaction in this system, i.e., a bipolaronic state might form with the presence of surface donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352766
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Stable hexagonal-wurtzite silicon phase by laser ablation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2758-2760 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stable phase of relatively large hexagonal-wurtzite silicon crystals (up to 20 μm) was directly deposited at low pressure using ultraviolet laser ablation. The films were grown on a variety of substrates at room temperature from a single crystal, cubic silicon target. Crystallites of the hexagonal-wurtzite phase of silicon were clearly identified using selected area electron diffraction. Further support for this identification was provided by confocal scanning micro-Raman spectroscopy. The deposition of hexagonal silicon films may lead to novel two-dimensional optoelectronic devices, and pave the way to studies of the electronic properties of this lower symmetry, uncommon silicon phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125140
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  • 3
    Electronic Resource
    Electronic Resource
    Lateral displacement of a Gaussian beam reflected from a grounded slab with negative permittivity and permeability (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2084-2086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique negative lateral shift is demonstrated in this letter for a Gaussian beam reflected from a grounded slab with both negative permittivity and permeability, which is distinctly different from a shift caused by a regular grounded slab. The incident beam is modeled as a tapered wave with a Gaussian spectrum. The waves inside and outside the slab are solved analytically from Maxwell's equations by matching the boundary conditions at the interfaces. It is shown that the field values in all regions can be unambiguously determined. Numerical simulations are presented and the field values as well as the power densities are computed for all regions, and a dramatic negative lateral shift is observed when both ε and μ are negative. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462865
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  • 4
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    Lattice dynamics and thermal conductivity of calcium fluoride via first-principles investigation (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-03-03
    Description: The lattice thermal conductivity of CaF 2 is accurately computed from a first-principles theoretical approach based on an iterative solution of the Boltzmann transport equation. The second- and third-order interatomic force constants are generated from a real-space finite-difference supercell approach. Then, the force constants for both the second- and third-order potential interactions are used to calculate the lattice thermal conductivity and related physical quantities of CaF 2 at temperatures ranging from 30 K to 1500 K. The obtained lattice thermal conductivity 8.6 W/(m·K) for CaF 2 at room temperature agrees better with the experimental value than other theoretical data, demonstrating the promise of this parameter-free approach in providing precise descriptions of the lattice thermal conductivity of materials. The obtained dielectric parameters and phonon spectrum of CaF 2 accord well with available data. Meanwhile, the temperature dependence curves of the lattice thermal conductivity, heat capacity, and phonon mean free path are presented.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    Highly uniform parallel microfabrication using a large numerical aperture system (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-13
    Description: In this letter, we report an improved algorithm to produce accurate phase patterns for generating highly uniform diffraction-limited multifocal arrays in a large numerical aperture objective system. It is shown that based on the original diffraction integral, the uniformity of the diffraction-limited focal arrays can be improved from ∼75% to 〉97%, owing to the critical consideration of the aperture function and apodization effect associated with a large numerical aperture objective. The experimental results, e.g., 3 × 3 arrays of square and triangle, seven microlens arrays with high uniformity, further verify the advantage of the improved algorithm. This algorithm enables the laser parallel processing technology to realize uniform microstructures and functional devices in the microfabrication system with a large numerical aperture objective.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-05-05
    Description: Recently, the piezotronic effect has been observed in two-dimensional single-layer MoS 2 materials, which have potential applications in force and pressure triggered or controlled electronic devices, sensors, and human-machine interfaces. However, classical theory faces the difficulty in explaining the mechanism of the piezotronic effect for the top- and enclosed-contacted MoS 2 transistors, since the piezoelectric charges are assumed to exist only at the edge of the MoS 2 flake that is far from the electronic transport pathway. In the present study, we identify the piezoelectric charges at the MoS 2 /metal-MoS 2 interface by employing both the density functional theory and finite element method simulations. This interface is on the transport pathway of both top- and enclosed-contacted MoS 2 transistors, thus it is capable of controlling their transport properties. This study deepens the understanding of piezotronic effect and provides guidance for the design of two-dimensional piezotronic devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Density functional studies on edge-contacted single-layer MoS2 piezotronic transistors (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-28
    Description: The piezotronic effect uses strain-induced piezoelectric charges at interfaces and junctions to tune and/or control carrier transport in piezoelectric semiconductor devices. This effect has recently been observed in single-layer 2D MoS 2 materials. However, previous work had found that metallic states are generated at the edge of a free-standing MoS 2 flat sheet, and these states may screen the piezoelectric charges. Using density functional theory simulations, we found that the metal–MoS 2 interface structure plays an important role in enhancing both the piezoelectric and piezotronic effects in MoS 2 transistors by breaking the metallic state screening effect at the MoS 2 edge. This study not only provides an understanding of the piezoelectric and piezotronic effects based on first principles calculations but also offers guidance for the design of two-dimensional piezotronic devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Two-photon polymerization of a three dimensional structure using beams with orbital angular momentum (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-12
    Description: The focus of a beam with orbital angular momentum exhibits internal structure instead of an elliptical intensity distribution of a Gaussian beam, and the superposition of Gauss-Laguerre beams realized by two-dimensional phase modulation can generate a complex three-dimensional (3D) focus. By taking advantage of the flexibility of this 3D focus tailoring, we have fabricated a 3D microstructure with high resolution by two-photon polymerization with a single exposure. Furthermore, we have polymerized an array of double-helix structures that demonstrates optical chirality.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Enhanced electron injection in laser-driven bubble acceleration by ultra-intense laser irradiating foil-gas targets (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-18
    Description: A scheme for enhancing the electron injection charge in a laser-driven bubble acceleration is proposed. In this scheme, a thin foil target is placed in front of a gas target. Upon interaction with an ultra-intense laser pulse, the foil emits electrons with large longitudinal momenta, allowing them to be trapped into the transmitted shaped laser-excited bubble in the gaseous plasma target. Two-dimensional particle-in-cell simulation is used to demonstrate this scheme, and an electron beam with a total electron number of 4.21 × 10 8   μ m − 1 can be produced, which is twice the number of electrons produced without the foil. Such scheme may be widely used for applications that require high electron yields such as positron and gamma ray generation from relativistic electron beams interacting with solid targets.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    The thermodynamical instability induced by pressure ionization in fluid helium (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-12-01
    Description: A systematic study of pressure ionization is carried out in the chemical picture by the example of fluid helium. By comparing the variants of the chemical model, it is demonstrated that the behavior of pressure ionization depends on the construction of the free energy function. In the chemical model with the Coulomb free energy described by the Padé interpolation formula, thermodynamical instability induced by pressure ionization is found to be manifested by a discontinuous drop or a continuous fall and rise along the pressure-density curve as well as the pressure-temperature curve, which is very much like the first order liquid-liquid phase transition of fluid hydrogen from the first principles simulations. In contrast, in the variant chemical model with the Coulomb free energy term empirically weakened, no thermodynamical instability is induced when pressure ionization occurs, and the resulting equation of state achieves a good agreement with the first principles simulations of fluid helium.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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