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  • 1
    Publication Date: 2015-05-15
    Description: By magnetizing the fusion fuel in inertial confinement fusion (ICF) systems, the required stagnation pressure and density can be relaxed dramatically. This happens because the magnetic field insulates the hot fuel from the cold pusher and traps the charged fusion burn products. This trapping allows the burn products to deposit their energy in the fuel, facilitating plasma self-heating. Here, we report on a comprehensive theory of this trapping in a cylindrical DD plasma magnetized with a purely axial magnetic field. Using this theory, we are able to show that the secondary fusion reactions can be used to infer the magnetic field-radius product, BR , during fusion burn. This parameter, not ρR , is the primary confinement parameter in magnetized ICF. Using this method, we analyze data from recent Magnetized Liner Inertial Fusion experiments conducted on the Z machine at Sandia National Laboratories. We show that in these experiments BR ≈ 0.34(+0.14/−0.06) MG cm, a ∼ 14× increase in BR from the initial value, and confirming that the DD-fusion tritons are magnetized at stagnation. This is the first experimental verification of charged burn product magnetization facilitated by compression of an initial seed magnetic flux.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 2
    Publication Date: 2015-05-15
    Description: Magnetized Liner Inertial Fusion experiments performed at Sandia's Z facility have demonstrated significant thermonuclear fusion neutron yields (∼10 12 DD neutrons) from multi-keV deuterium plasmas inertially confined by slow (∼10 cm/ μ s), stable, cylindrical implosions. Effective magnetic confinement of charged fusion reactants and products is signaled by high secondary DT neutron yields above 10 10 . Analysis of extensive power, imaging, and spectroscopic x-ray measurements provides a detailed picture of ∼3 keV temperatures, 0.3 g/cm 3 densities, gradients, and mix in the fuel and liner over the 1–2 ns stagnation duration.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 9638-9646 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The phase equilibrium properties of a molecular-based model of binary aqueous mixtures are investigated using an extended primitive model (EPW) for water, which incorporates a mean-field attractive term in addition to the interactions given by the primitive model studied in part I of this series of papers. The second component, representing a nonpolar fluid, is modeled by a general hard body with a mean-field attractive term. Analytical expressions for the Helmholtz free energy of this precisely defined molecular model are obtained from statistical mechanical theory, as a function of the molecular size, the mean-field interaction term, and the shape of the second component. The predictions of our model are compared with the behavior of two classes of real aqueous mixtures: Group A={water+inert gases, hydrogen} and Group B={water+n-alkanes}. The phase equilibrium properties are studied as a function of the ratio of the critical temperature τ and critical volume λ with respect to the corresponding quantities for water, and the global phase diagram (i.e., the type of phase behavior and its dependence on the model parameters) is determined. Since τ and λ are obtainable both from our theory and from experiment, our approach thus contains no adjustable parameters. The theory gives qualitatively correct predictions of the phase behavior of these two classes of mixtures, i.e., of the transition between Type IIIc and Type IIId critical line behavior in the Konynenberg and Scott classification scheme, of the presence or absence of pressure minima for Group B mixtures exhibiting Type IIIc behavior, and the dependence of the temperature and pressure of the Type IIIc temperature minimum on the size of the second-component molecule. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 3019-3027 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a new efficient Monte Carlo method for the molecular-based computer simulation of chemical systems undergoing any combination of reaction and phase equilibria. The method requires only a knowledge of the species intermolecular potentials and their ideal-gas properties, in addition to specification of the system stoichiometry and thermodynamic constraints. It avoids the calculation of chemical potentials and fugacities, as is similarly the case for the Gibbs ensemble method for phase equilibrium simulations. The method's simplicity allows it to be easily used for situations involving any number of simultaneous chemical reactions, reactions that do not conserve the total number of molecules, and reactions occurring within or between phases. The basic theory of the method is presented, its relationship to other approaches is discussed, and applications to several simple example systems are illustrated.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1993-1996 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of hydrogenation of InP without surface degradation has been surmounted by exposure of the InP surface to a hydrogen plasma through a thin SiNx(H) cap layer. This layer is H permeable at the hydrogenation temperature of 250 °C, but P or PH3 impermeable thus minimizing PH3 loss and the attendant In droplet formation. In contrast to our results for this type of plasma exposure of GaAs, we find that shallow acceptors in InP are heavily passivated, whereas shallow donors are only very weakly affected. For example, p+-InP(Zn) of 3×1018 cm−3 has its residual hole concentration reduced to ≤3×1014 cm−3 over a depth of 1.3 μm by a 250 °C, 0.5 h deuteration. The presence of acceptors impedes H (or D) indiffusion, as indicated by D diffusion under the same conditions occurring to depths of 18 and 35 μm in p-InP (Zn, 2×1016 cm−3) and n-InP (S or Sn), respectively. Annealing for 1 min at 350 °C causes the acceptor passivation to be lost and the hole concentration to be returned to its prehydrogenation level, indicating that the passivation has similar thermal stability to that of acceptors in GaAs, but lower than that of donors.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4319-4323 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed ohmic contacts of Pt/Ti to 5×1018 cm−3 doped p-InGaAsP (λg =1.3 μm) have been fabricated by rapid thermal processing of sputtered and e-gun-deposited metallizations. While the former as-deposited had a rectifying characteristic, the latter showed ohmic behavior prior to any heat treatment, with a specific contact resistance of 4×10−3 Ω cm2. Rapid thermal processing at temperatures higher than 400 °C caused the formation of ohmic contacts for the sputtered metals also, but with the evaporated metals producing slightly lower contact resistance. The lowest specific contact resistance values of 3.6–5.5×10−4 Ω cm2 for evaporated and sputtered metallizations, respectively, were achieved in both cases as a result of heating at 450 °C for 30 s. These heating conditions produced only a limited reaction at the Ti/InGaAsP interface, which was sharper for the e-gun-deposited contact, but had a significant effect on the stresses in the Ti/Pt bilayer. In both the sputtered and electron gun evaporated samples, the stresses were inverted from tensile as-deposited to compressive with values of 2.4×109 and 1.0×109 dyn cm−2, respectively, as a result of the heat treatment.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2059-2063 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive-ion-etch-induced damage in silicon has been investigated using transmission electron microscopy (TEM), Rutherford backscattering (RBS) ion channeling, and laser-induced thermal waves (TW). A correlation has been found between lattice damage in silicon due to reactive ion etching and leakage current properties of thermal oxide films subsequently grown on the damaged silicon. The silicon wafers were plasma etched using Ar, CF4, NF3, and CHF3 etch gases at dc bias voltages ranging from 150 V to 450 V. Lattice damage at the silicon surface, as determined by TEM and RBS, was found to depend on both the dc bias voltage and the etch chemistry. Subsequent leakage current measurements of the silicon oxides show that the samples with more silicon substrate lattice damage prior to oxidation also have correspondingly higher leakage. The thermal wave technique also indicates a damage dependence on dc bias and on etch chemistry; however, the thermal wave measurements indicate a damage dependence on etch chemistry different from TEM and RBS measurements. The source of this difference is not yet understood.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8276-8285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear equation describes the time-independent maximum temperature in the boundary layer adjacent to the mirror facet. The solution of the problem is a multi-valued function of current. The graph of the maximum steady-state temperature as a function of current gives a fold-shaped response curve, which indicates that no bounded steady state exists beyond a critical value of current. For certain device parameters and initial conditions, thermal runaway occurs. A mechanism for the sudden mode of semiconductor laser failure is described in terms of thermal runaway. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1772-1775 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: For a piezoelectric device with multiple electrodes, it should be possible to quantitatively and conveniently measure the piezoelectric coefficient d31 by use of the double piezoelectric effect, without the need for any unusual apparatus or a calibration sample. One pair of electrodes is used to excite the piezo, and another is used to measure the response. For example, for a piezoelectric tube this should allow measurement of d31 as a function of temperature or of lateral offset voltage. An important correction to the current theory is described. Measurements on two piezo tubes are presented for excitation voltages in the range of 0.5–110 Vpp. An inductive proximity sensor was used to measure the actual piezo motion. It is shown that the current theory disagrees with this and previous experiments by a simple factor of 2 for symmetric excitations. However, for asymmetric excitations the disagreement with theory is more complex, and the current theory does not accurately predict the effects of varying tube geometry. © 2000 American Institute of Physics.
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  • 10
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Daresbury Laboratory is currently completing the construction and commissioning of five new experimental research stations utilizing high flux hard x-ray radiation from a 6 T superconducting wiggler magnet. The broad areas of science covered by the new stations and the novel features are presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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