Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 1856-1859
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Direct observations of early stages of molecular-beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces are presented. Cross-sectional transmission electron microscopy and plan view scanning electron microscopy images directly reveal three-dimensional island growth for substrate temperatures above 300 °C. Island size, island spacing, surface morphology, and stacking fault defect spacing all increase with substrate temperature for fixed Ga and As fluxes. Below 300 °C, 7-nm-thick films are continuous and uniform. Films deposited on surfaces tilted from (100) coalesce anisotropically with respect to the tilt axis.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.338029
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