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  • 1
    Electronic Resource
    Electronic Resource
    Molecular-beam studies of the dynamics of organic electron transfer reactions (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 2240-2243 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using crossed molecular beams we have studied the dynamics of several electron transfer reactions, A+B→A++B−, where A is an organic base and B is SnCl4, SbF5, or TiCl4. We propose a simple, modified stripping model whereby the electron jumps at the point where the ionic and covalent surfaces cross to form a pair of ions produced by a vertical, Franck–Condon transition. All initial energy in excess of this vertical threshold appears in the translational energy of the products. This model is verified in one case where the vertical ionization potential and electron affinity are known and is then used to obtain a rough vertical electron affinity of SbF5. Except at the lowest energies all the reactions follow this modified stripping mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448318
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Energy requirements for a chemical reaction. I. Halide ion transfer to antimony pentafluoride (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 4916-4924 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using crossed seeded nozzle beams we have examined the energy dependence of the cross section for the reaction SbF5+RX→SbF5X−+R+, where X is a halogen and R an organic radical. By using a range of carrier gases in the two beams and by varying the nozzle temperature and the beam intersection angle, we can separately vary the relative translational energy and the vibrational temperatures of the beams. Near the threshold, vibrational energy seems to play a very important role. At energies well above threshold, the reactive cross section appears to depend largely on translational energy. We explain this by assuming that the reaction takes place on two potential energy surfaces. By choosing RX properly, the R+ product will decompose. In two cases we observe that, although vibrational energy in RX has a minor effect on the halide abstraction, it is very important in the subsequent decomposition of R+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452661
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  • 3
    Electronic Resource
    Electronic Resource
    10 μm infrared hot-electron transistors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1348-1350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new hot-electron transistor for 10 μm infrared radiation detection is presented and discussed. The device utilizes an infrared sensitive GaAs/AlGaAs multiple quantum well structure as emitter, a wide quantum well as base, and a thick quantum barrier placed in front of the collector as an electron energy high pass filter. The energy filter selectively permits the higher energy photocurrent to pass to the collector; the lower energy dark current is rejected by the filter, and is drained through the base. The device detectivity, as noted by the collector photocurrent measurements, is much enhanced in comparison with companion infrared photoconductive devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103480
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 337-339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarity of the lattice of bulk single GaN crystals and the polarity of homoepitaxial and heteroepitaxial-on-sapphire GaN thin films has been studied using convergent beam electron diffraction. Diffraction patterns obtained at 200 kV for the 〈1–100〉 projection of GaN were matched with calculated patterns. The lattice orientations of two commonly observed bulk single-crystal facets were identified. It is shown that the smooth facets in single crystals correspond to the (0001), Ga-terminated, lattice planes, whereas the rough facets correspond to the (0001¯), N-terminated, planes. It is also shown that metalorganic chemical vapor deposition epitaxy retains the polarity of the substrate, i.e., no inversion boundaries were observed. Heteroepitaxy on sapphire is shown to grow in the (0001), Ga-terminated orientation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118052
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