ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
A simple method for producing a Au:p-n-CdTe Schottky barrier is described. The shallow p-n junction is formed by photoelectrochemical surface oxidization of n-CdTe. X-ray photoelectron spectroscopy, Auger electron spectroscopy depth profiling, and electron-beam-induced-current measurements provide important insight into the underlying causes of the formation of the p-type layer. Current-voltage and capacitance-voltage measurements show that the thin p-layer enhances the effective barrier height relative to that of a traditional Au:n-CdTe junction. These results account for the Au:p-n-CdTe cells exhibiting higher open-circuit photovoltages and higher photoconversion efficiencies than do Au:n-CdTe Schottky-barrier cells. From temperature dependence studies of the current-voltage characteristics, detailed information on the charge-transport mechanism of the junction was obtained. Photocurrent spectra of Au:p-n-CdTe as a function of temperature reveal that exciton excitation in CdTe contributes to the photocurrent.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.354652
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