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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3904-3907 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An exact solution is derived to the one-dimensional, time-dependent, heat-conduction equation for a two-layer, semi-infinite, composite solid with uniform heat generation in the surface layer, no heat transfer through the surface plane, and uniform initial temperature. The interface between the two layers is assumed to have no thermal contact resistance. This solution enables a discussion of the ideality with which a step-function electric current in a metallic foil can generate a step-function heat flux into a contacting semi-infinite solid. Previous measurements of thermal diffusivity (based on the above conditions) have relied on the idealized constant-flux solution for data reduction. It is shown here that the temperature errors in the substrate arising from nonideality of the constant-flux boundary condition increase with depth into the substrate, foil thickness, and decreasing thermal conductivity/diffusivity of the substrate.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4458-4460 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy was used to analyze the effects of annealing treatments on the morphologies of discontinuous gold films evaporated onto polystyrene or poly(2-vinylpyridine) substrates. For polystyrene substrates the average size of discrete gold particles increases significantly during a long-term annealing treatment at 179 °C. The size distribution is well approximated by a log normal distribution function, consistent with a coalescence mechanism for particle growth. The fluid character of the polymer substrates at the annealing temperature of interest allows us to control this coalescence rate, thereby providing a unique method for controlling the microstructure of discontinuous metal films. Cross-sectional transmission electron microscopy showed that the coalescence rate for gold particles in a poly(2-vinylpyridine) matrix is much less than the coalescence rate for gold particles in a polystyrene matrix, indicating that polymer/metal interactions play an important role in the determination of the coalescence rate.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1406-1409 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe first results for deuterium effusion from undoped and doped crystalline silicon (n- and p-type) treated in a D2 plasma under different conditions. The dependence of the effusion spectra on doping level, passivation temperature, sample bias, and preannealing are presented and the results are discussed on the basis of different D-bonding configurations in the passivated silicon samples.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 6968-6974 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Following the recent resolution of the longstanding problem of reconciling constant frequency nuclear-spin lattice relaxation (SLR) activation energies and d.c. conductivity activity energies in ion conducting glasses, we point out a new problem which seems not to have been discussed previously. We report conductivity data measured at a series of fixed frequencies and variable temperatures on a lithium chloroborate glass and compare them with SLR data on identically prepared samples, also using different fixed frequencies. While phenomenological similarities due to comparable departures from exponential relaxation are found in each case, pronounced differences in the most probable relaxation times themselves are observed. The conductivity relaxation at 500 K occurs on a time scale shorter by some 2 orders of magnitude than the 7Li SLR correlation, and has a significantly lower activation energy. We show from a literature review that this distinction is a common but unreported finding for highly decoupled (fast-ion conducting) systems, and that an inverse relationship is found in supercoupled salt/polymer "solid'' electrolytes. In fast-ion conducting glasses, the slower SLR process would imply special features in the fast-ion motion which permit spin correlations to survive many more successive ion displacements than previously expected. It is conjectured that the SLR in superionic glasses depends on the existence of a class of low-lying traps infrequently visited by migrating ions.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3381-3385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3625-3640 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the design of a versatile ultrahigh vaccum (UHV) low temperature scanning force microscope system. The system allows scanning probe microscopy measurements at temperatures between 6 and 400 K and in magnetic fields up to 7 T. Cantilevers and samples can be prepared in UHV and transferred to the microscope. We describe some technical details of our system and present first measurements performed at different temperatures and in various scanning force microscopy operation modes. We demonstrate distortion free and calibrated images at temperatures ranging from 8 to 300 K, atomic resolution on NaCl at 7.6 K and various magnetic force microscopy images of vortices in high transition temperature superconductors. It is demonstrated that our instrumentation reaches the thermodynamically determined sensitivity limit. Using standard cantilevers force gradients in the 10−6N/m range, corresponding forces of about 10−15N can be measured. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A partial monolayer of silane, SiH4, adsorbed on a GaAs(100) surface at 40 K may be fixed in a desired pattern by irradiation with an electron microbeam, and then covered in situ by GaAs grown by molecular-beam epitaxy. The initial rate of Si coverage under irradiation by 1.5 keV electrons is (0.031±0.005) Si per electron per monolayer of silane. Applications include the in situ fabrication via patterned doping of circuit elements and structures with interesting electronic properties. As an example, we have made an isolated buried channel field-effect transistor and measured its properties. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD's fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2507-2515 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the kinetics of metastable defect creation in amorphous hydrogenated silicon we introduce the Constant Degradation Method as a new experimental scheme. In contrast to conventional degradation experiments in which the incident light intensity is constant during light soaking, in this method the photoconductivity of the sample is kept constant by continuously increasing the light intensity. In this case a linear time dependence of the required light intensity and of the resulting defect density is observed experimentally. A detailed analysis of the method shows that the data obtained are in accordance with the assumption of the "bond-breaking'' model, i.e., the metastable defects are created by bimolecular recombination of localized electron-hole pairs. The observed time dependence is at variance with the stretched exponential time dependence predicted for dispersive transport models. Effects of sample heating due to high light intensities and of Fermi level shifts on the observed time dependence are also discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1620-1622 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has been suggested that excitonic tail-to-tail recombination leads to metastable defect creation in a-Si:H. Our experimental results are shown to be consistent with this model.
    Type of Medium: Electronic Resource
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