ISSN:
1089-7623
Quelle:
AIP Digital Archive
Thema:
Physik
,
Elektrotechnik, Elektronik, Nachrichtentechnik
Notizen:
A cleanroom compatible anodization cell for use with 150 mm Si wafers has been constructed and tested. The material of construction is polyvinylidene fluoride, Kynar(large-closed-square), with Chemraz(large-closed-square) (elastomeric polytetrafluoroethylene) O-rings used for sealing. The back contact is made through a dilute HF solution, thus eliminating the possibility for metallic contamination which exists for other forms of back contact. Pt electrodes immersed in the back contact and front contact solutions are the primary electrical connection sites. Ellipsometry, Fourier transform infrared spectroscopy (FTIR), and dilute HF etch rate experiments were used to characterize the as-grown and annealed anodic oxides produced in this cell. Ellipsometric thickness mapping showed excellent lateral oxide uniformity over the entire anodized area; the standard deviations were 〈2 A(ring) (for oxides ≤100 A(ring) in thickness), 〈6 A(ring) (for oxides ≤400 A(ring) in thickness), and 〈10 A(ring) (for oxides 〈500 A(ring) in thickness). The properties of the oxides, as evaluated by FTIR spectroscopy are essentially identical to those grown on small-area samples using conventional anodization with a metallic back contact. © 1996 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1146944
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