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  • 1
    Electronic Resource
    Electronic Resource
    Evidence for proton motion in the recovery of light-induced degradation in amorphous silicon solar cells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1726-1729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light-induced degradation of amorphous silicon solar cells can be reversed by the application of a strong electric field in the dark, and the rate of reversal increases with field strength, temperature, and light intensity. The activation energy for annealing the degradation in the dark is reduced from about 1.34 eV under open circuit conditions to 1.16 eV by applying a strong reverse bias. When the degraded cells are exposed to intense illumination in addition to a strong reverse bias, the activation energy for the recovery of the performance decreases to about 0.77 eV. Both the light-induced degradation and the reversal of the degradation can be explained by a model based on proton motion within a metastable defect complex. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366902
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The reversal of light-induced degradation in amorphous silicon solar cells by an electric field (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2168-2170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strong electric field has been shown to reverse the light-induced degradation of amorphous silicon solar cells while exposed to intense illumination at moderate temperatures. The rate of reversal increases with temperature, illumination intensity, and with the strength of the reverse bias field. The reversal process exhibits an activation energy on the order of 0.9 eV and can be increased by the trapping of either electrons or holes in the presence of a strong electric field. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118947
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  • 3
    Electronic Resource
    Electronic Resource
    Irreversible light-enhanced degradation in amorphous silicon solar cells at elevated temperatures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 28-30 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An irreversible light-enhanced degradation has been observed in amorphous silicon solar cells exposed to intense illumination (50 suns) at elevated temperature ((approximately-greater-than)130 °C). Unlike the light-induced degradation observed at lower temperatures, the light-enhanced degradation observed at elevated temperatures is not reversed by annealing and it not suppressed by a strong reverse bias. An analysis of the time decay of the short-wavelength spectral response at various temperatures indicates that the degradation mechanism is associated with the diffusion of hydrogen at elevated temperatures both in the dark and under intense illumination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116745
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1447-1449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric field-enhanced degradation has been observed in amorphous silicon solar cells exposed to intense illumination (45–60 suns) at elevated temperatures ((approximately-greater-than)160 °C). The front tin oxide contacts of both p–i–n and n–i–p cells darken significantly when a strong reverse bias is applied at elevated temperatures and under intense illumination. Compositional profiles of the cells show that a strong reverse bias causes a depletion of hydrogen near the contacts. These results are interpreted in terms of proton motion near the p/i interface of p–i–n cells and negative hydrogen ion motion near the i/n interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117610
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  • 5
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    Longitudinal bunch shaping of picosecond high-charge MeV electron beams (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-10-21
    Description: With ever increasing demands for intensities in modern accelerators, the understanding of space-charge effects becomes crucial. Herein are presented measurements of optically shaped picosecond-long electron beams in a superconducting L-band linac over a wide range of charges, from 0.2 nC to 3.4 nC. At low charges, the shape of the electron beam is preserved, while at higher charge densities, modulations on the beam convert to energy modulations. Energy profile measurements using a spectrometer and time profile measurements using a streak camera reveal the dynamics of longitudinal space-charge on MeV-scale electron beams.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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