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  • 1
    Digitale Medien
    Digitale Medien
    Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3087-3089 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have observed that stress-induced leakage currents (SILC) in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after stress, regardless of the polarity of the applied gate bias. The reduction of SILC increased with the applied gate bias and began to saturate after 105 s. In addition, the reduction of SILC was significantly enhanced in a hydrogen ambient, suggesting a strong link between the reduction of SILC and trapped-hole annealing. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1287403
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  • 2
    Digitale Medien
    Digitale Medien
    Fabrication and characteristics of submicron tunneling junctions on high Tc superconducting c-axis thin films and single crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7675-7677 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report successful fabrication and characteristics of submicron-size tunneling junctions using c-axis YBa2Cu3O7−y (YBCO) thin films of 800 nm thickness and Bi2Sr2CaCu2O8+δ(Bi-2212) single-crystal whiskers. The junctions were made using a three-dimensional focused-ion-beam etching method. First, a microbridge was patterned in a required junction width by normal direction etching. By tilting the sample stage up to 90°, two grooves on the bridge were etched from the lateral direction in order to create the required junction size. The 60 K YBCO junctions did not show any degradation of critical current density (Jc) down to an in-plane area of 0.5 μm2 and showed current–voltage (I–V) characteristics of the collective switching transition from the zero voltage state to the resistive state. For Bi-2212 stacks smaller than 1 μm2, we identified some of the features of charging effects on the I–V characteristics. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1361267
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  • 3
    Digitale Medien
    Digitale Medien
    Stark effect and Stark-ladder effect in Al0.4Ga0.6As/GaAs asymmetric coupled multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2486-2494 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence (PL) measurements at 10 K were performed in order to investigate the influence of electric fields on the exciton states in Al0.4Ga0.6As/GaAs asymmetric coupled multiple quantum wells (ACMQW) grown by molecular-beam epitaxy. The coupling of the electronic energy levels in the wells led to an enhancement of the quantum-confined Stark effect. The PL intensity decreased as the electric field increased. Calculated values of the intersubband transition energies were in good agreement with the experimental values for the ACMQW, and these values showed a similar behavior as those for the step quantum well. When the external applied field was very strong, Stark-ladder transitions were observed, and the measured dependence of the field-induced energy shifts of the Stark-ladder transitions for the ACMQW agreed with theory. These results indicate that the Stark effect and the Stark-ladder transitions in a unique ACMQW based on the AlxGa1−xAs/GaAs structure were observed simultaneously. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358777
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  • 4
    Digitale Medien
    Digitale Medien
    Ion mixing and thermochemical properties of tracers in Ag (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2449-2451 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Very thin films of Ni, Ta, W, Pb, and Bi in a Ag matrix were irradiated at 77 K with 330 keV Kr ions at doses from 3 to 7×1015 ions/cm2 and analyzed at room temperature by backscattering of 1.9 MeV He+. The measured mixing efficiencies, Dt/φFD, for the various tracers correlate with their respective tracer impurity diffusion coefficients and impurity-vacancy binding energies in Ag. The results concur with previous ones with a Cu matrix and further support the idea that the parameters that are important for thermal diffusion are also important for ion mixing in a thermal spike.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341018
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  • 5
    Digitale Medien
    Digitale Medien
    Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2630-2632 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As composition of over 1.5% and 1%, respectively. Photoluminescence (PL) spectra for the non-phase-separated GaNP (P composition: 0.37%) and GaNAs (As composition: 0.26%) show redshift of 50 and 40 meV, respectively, from that of GaN, and exhibit Stokes shift of about 80 meV which is smaller than that of GaN (100 meV). On the other hand, the PL spectrum for the phase-separated GaNP shows a large redshift peaking at 2.101 eV. This peak is considered to be an emission from the phase-separated GaP-rich GaPN region. PL excitation spectrum shows two large broad peaks. One at 2.982 eV corresponds to the absorption at the Γ point of GaP-rich region, and the other at 2.308 eV corresponds to the absorption at the isoelectronic band edge of GaP-rich GaPN alloy originated from the X point of GaP. In the case of phase-separated GaNAs, no PL is observed, suggesting that the optical properties are much more sensitive to crystalline quality in GaAs-rich GaAsN than in GaP-rich GaPN. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122535
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  • 6
    Digitale Medien
    Digitale Medien
    Submicron stacked-junction fabrication from Bi2Sr2CaCu2O8+δ whiskers by focused-ion-beam etching (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1156-1158 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We fabricated submicron-sized intrinsic Josephson junctions by the focused-ion-beam (FIB) etching method. The principal result was a reduction of the in-plane junction area to 0.3 μm2 by direct FIB etching with no degradation in the critical transition temperature (Tc). In the current (I)–voltage (V) characteristics of these stacks, the gap structure and the normal state resistance are clearly observed together with a reduction of the Joule heating and disappearance of the branch structure. The Coulomb staircase structure was found in the I–V curves of submicron junctions as a result of their small effective capacitance of fF order. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123472
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  • 7
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    Cystatin SN neutralizes the inhibitory effect of cystatin C on cathepsin B activity (2013)
    Nature Publishing Group (NPG)
    Details
    Publikationsdatum: 2013-12-20
    Beschreibung: Cystatin SN neutralizes the inhibitory effect of cystatin C on cathepsin B activity Cell Death and Disease 4, e974 (December 2013). doi:10.1038/cddis.2013.485 Authors: J-T Kim, S-J Lee, M A Kang, J E Park, B-Y Kim, D-Y Yoon, Y Yang, C-H Lee, Y I Yeom, Y-K Choe & H G Lee
    Schlagwort(e): cystatin SNCystatin CCathepsin Bcolon cancerinvasion
    Digitale ISSN: 2041-4889
    Thema: Biologie , Medizin
    Publiziert von Nature Publishing Group (NPG)
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  • 8
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    Claudin-1 induces epithelial–mesenchymal transition through activation of the c-Abl-ERK signaling pathway in human liver cells (2013)
    Nature Publishing Group (NPG)
    In: Oncogene
    Details
    Publikationsdatum: 2013-10-11
    Beschreibung: Claudin-1 induces epithelial–mesenchymal transition through activation of the c-Abl-ERK signaling pathway in human liver cells Oncogene 32, 4873 (10 October 2013). doi:10.1038/onc.2012.505 Authors: Y Suh, C-H Yoon, R-K Kim, E-J Lim, Y S Oh, S-G Hwang, S An, G Yoon, M C Gye, J-M Yi, M-J Kim & S-J Lee
    Schlagwort(e): Claudin-1epithelial–mesenchymal transitionERK signaling
    Print ISSN: 0950-9232
    Thema: Medizin
    Publiziert von Nature Publishing Group (NPG)
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  • 9
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    Laser scattering diagnostics of an argon atmospheric-pressure plasma jet in contact with vaporized water (2015)
    American Institute of Physics (AIP)
    Details
    Publikationsdatum: 2015-12-03
    Beschreibung: The radial profiles of the electron density, electron temperature, and molecular rotational temperature are investigated in an argon atmospheric-pressure plasma jet in contact with vaporized water, which is driven by a 13.56   MHz radio frequency by means of the Thomson and Raman laser scattering methods. There is a distinct difference in the radial profiles of the plasma parameters between plasmas in contact with water and those without water contact. In the case of plasmas without vaporized water contact, all the parameters have a single-peak distribution with maximum values at the center of the discharge. In the case of plasmas in contact with vaporized water, all parameters have double-peak distributions; a neighboring peak appears beside the main peak. The new peak may have originated from the ripple of the water surface, which works as a cathode, and the peak of the ripple offers a sharp curvature point, playing the role of a pin. Our experimental results and the underlying physics are described in detail.
    Print ISSN: 1070-664X
    Digitale ISSN: 1089-7674
    Thema: Physik
    Publiziert von American Institute of Physics (AIP)
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  • 10
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    Time-delayed transition of normal-to-abnormal glow in pin-to-water discharge (2016)
    American Institute of Physics (AIP)
    Details
    Publikationsdatum: 2016-08-02
    Beschreibung: Time-delayed transition of normal-to-abnormal glow was investigated in discharge between spoke-like pins and ultrapure water by applying AC-driven power at a frequency of 14.3 kHz at atmospheric pressure. The normal-to-abnormal transition can be recognized from the slope changes of current density, gas temperature, electrode temperature, and OH density. The slope changes took place in tens of minutes rather than just after discharge, in other words, the transition was delayed. The time-delay of the transition was caused by the interaction between the plasma and water. The plasma affected water properties, and then the water affected plasma properties.
    Print ISSN: 1070-664X
    Digitale ISSN: 1089-7674
    Thema: Physik
    Publiziert von American Institute of Physics (AIP)
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