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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (40)
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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (40)
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  • 1
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 8 ( 2013), p. 083201-
    Kurzfassung: The L-shell X-rays of Si, induced by 50-250 keV proton and 1.0-3.0 MeV Ar11+ ions impacting are measured. It is found that the X-ray induced by Ar11+ is about 36 eV higher than that induced by proton. That indicates that 3, 4 L-shell electrons of Si atom are multiply-ionized by Ar11+ ion impact. The X-ray production cross section is extracted from the yield data and compared with the results from the BEA, PWBA and ECPSSR models. With the same unit incident energy, the cross section induced by Ar11+ is about 3 orders of magnitude larger than that produced by proton. For proton impact, the ECPSSR model gives an accurate prediction to the cross section data. However, the BEA model, considering the change of fluorescence yield due to the multiple-ionization, presents the results that are in better agreement with the experimental results for Ar11+ ions.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2013
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 65, No. 2 ( 2016), p. 027901-
    Kurzfassung: The X-ray emission spectra produced by 2.4-6.0 MeV Xe20+ ions impacting on vanadium surface were measured. The V K-shell X-ray production cross sections were extracted from the experimental yield data and compared with the theoretical predictions of the binary encounter approximation (BEA), the plane wave born approximation (PWBA), and the energy-loss coulomb-repulsion perturbed-stationary-state relativist (ECPSSR). In order to predict reasonably the inner-shell ionization induced by highly charged heavy ions during the asymmetric collisions at near the Bohr velocity, the corrections of BEA model are discussed. It is found that the X-ray production cross section induced by highly charged heavy ions moving at near the Bohr velocity is on the magnitude of 1 barn, which is almost four orders of magnitude larger than that induced by proton. The ECPSSR, which is regarded as the best model to simulate the inner-shell ionization by light ions, may underestimate the experimental data at least three orders of magnitude. The PWBA model presents a prediction to the results on an order of magnitude better than the ECPSSR simulation, but gives a worse tendency than the BEA model. The BEA calculations, corrected both by Coulomb repulsion and effective nuclear charge, present the best agreement with the experimental results. It is proposed, that in the energy region near the Bohr velocity, during the asymmetric collisions of Xe20+ ions with V atoms, the K-shell electron of V is ionized by direct ionization, and that it can be described by the binary encounter process between the xenon ions and the bound electrons. The X-ray production cross section can be simulated by BEA model, but the corrections of Coulomb repulsion and effective nuclear charge must be considered.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2016
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2022
    In:  Acta Physica Sinica Vol. 71, No. 2 ( 2022), p. 028501-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 2 ( 2022), p. 028501-
    Kurzfassung: Terahertz pulses accelerating and scanning electron beam can break through the limitation of accelerating electric field between cathodes and grids in traditional streak tubes, thus reducing the time dispersion and enhancing the temporal resolution of time-scanning detectors. Based on this new technology, in this paper an ultra-small structured time-resolved detector with no focusing pole is designed. The terahertz pulse coupling/enhancing device suitable for acceleration zone and scanning zone is designed and optimized. The enhanced coefficient of the terahertz pulse electric field in the device reaches 9.39. In the paper, the relationship between time dispersion in acceleration zone and the moment of electrons emission is analyzed theoretically. We also analyze the influence of space charge effect on time dispersion. The electronic trajectory tracking is used to calculate and analyze the time dispersion of this detector, and finally the time resolution is better than 50fs.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2022
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1994
    In:  Acta Physica Sinica Vol. 43, No. 7 ( 1994), p. 1144-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 43, No. 7 ( 1994), p. 1144-
    Kurzfassung: The surface morphology and V-I characteristics of the Ag thin films deposited on the fractal substrates of α-Al2O3 ceramics by rf magnetron sputtering have been investigated. The fractal surface morphology, poor crystallinity and abnormal nonli-near do V-I behavior of the thin films have been observed. The crystallinity of the films deposited on the fractal substrates is improved by increasing the substrate temperature and the thickness of the thin film. The nonlinear V-I characteristics are influenced by the thickness of the thin films, substrate temperature and measu-ring environment.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 1994
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2022
    In:  Acta Physica Sinica Vol. 71, No. 21 ( 2022), p. 217302-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 21 ( 2022), p. 217302-
    Kurzfassung: Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional transition metal sulfides have unique electronic structure and properties, and they are widely used in electronic devices, energy conversions, memories and other fields. In this work, a two-dimensional ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor is prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10〈sup〉1〈/sup〉 to 10〈sup〉5〈/sup〉. Then, the resistance and on/off ratio of the memtransistor can be controlled by changing the light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in a range of 10〈sup〉2〈/sup〉–10〈sup〉5〈/sup〉 by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9 × 10〈sup〉4〈/sup〉 s, the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor still maintains a switch ratio close to 10〈sup〉4〈/sup〉, indicating the good stability and durability of the device. It demonstrates that the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 memtransistor will be one of potential candidates for the next- generation nonvolatile memory applications.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2022
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2019
    In:  Acta Physica Sinica Vol. 68, No. 3 ( 2019), p. 034101-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 68, No. 3 ( 2019), p. 034101-
    Kurzfassung: In this paper, the idea of electromagnetic surface (EMS) is introduced into the design of microstrip antenna array. The antenna element proposed in this paper is treated as an EMS element, whose reflection characteristics are taken into consideration in the process of antenna array design. Firstly, a rectangular patch antenna element is designed. Then, by cutting arc-shaped structure into a rectangular patch, another element is created to generate 180° ± 30° effective phase difference compared with original antenna element. As a consequence, 180° ± 30° effective phase difference is obtained from 5.5 GHz to 6.9 GHz for the 〈i〉y〈/i〉-polarized incidence. Meanwhile, for the 〈i〉x〈/i〉-polarized incidence, each of the two elements possesses high absorptivity over the operating frequency as a result of matching load. Besides, the two elements work in the same resonant mode and the same resonant frequency band when treated as radiators. In order to further explain the consistency in radiation and difference in reflection between the two structures, current distribution at 5.8 GHz is investigated in terms of radiation and reflection. Then, the two elements are arranged into a chessboard array to achieve the low scattering performance based on phase cancellation principle under the 〈i〉y〈/i〉-polarized incidence. Based on the absorption principle, the matching load is added to improve the scattering performance of the composite antenna array with the 〈i〉x〈/i〉-polarized incidence. Simultaneously, the proposed antenna array maintains good radiation characteristics due to the consistency between the radiation performances of the two elements. The corresponding antenna array is fabricated and tested. Simulated and measured results prove that the proposed antenna array also achieves good radiation performance. And a 6 dB radar cross section reduction is obtained from 5.6 to 6.2 GHz under the 〈i〉x〈/i〉 polarization and from 5.5 to 7.0 GHz under the 〈i〉y〈/i〉 polarization for the normal incident wave, implying 10.1% and 24% in relative bandwidth, respectively. In-band reflection suppression in the specular direction is demonstrated for an incident angle of 30° under both polarizations. The measured results are in good agreement with the simulated ones. Additionally, the approach proposed in this paper offers an effective way to deal with the confliction between radiation and scattering performance, and can also be applied to other kinds of antenna arrays.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2019
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 0, No. 0 ( 2022), p. 0-
    Kurzfassung: Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional Transition Metal Sulfides(TDMS)have unique electronic structure and properties, and they are widely used in electronic devices, energy conversion, memory and other fields. In this paper, a two-dimensional ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor was prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10〈sup〉1〈/sup〉 ~ 10〈sup〉5〈/sup〉. Then, the multi-level resistance and on/off ratio of the memtransistor can be controlled by the change of light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in the range of 10〈sup〉2〈/sup〉 ~ 10〈sup〉5〈/sup〉 by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9×10〈sup〉4〈/sup〉 s, the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 heterostructure memtransistor still maintains a switch ratio close to 10〈sup〉4〈/sup〉, indicating the good stability and durability of the device. It demonstrates that the ReSe〈sub〉2〈/sub〉/WSe〈sub〉2〈/sub〉 memtransistor will be one of potential candidates for the next generation nonvolatile memory applications.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2022
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 72, No. 14 ( 2023), p. 148401-
    Kurzfassung: 〈sec〉With the extensive integration of portable computers and smartphones with “Internet of Things” technology, further miniaturization, high reading/writing speed and big storage capacity are required for the new-generation non-volatile memory devices. Compared with traditional charge memory and magnetoresistive memory, resistive random access memory (RRAM) based on transition metal oxides is one of the promising candidates due to its low power consumption, small footprint, high stack ability, fast switching speed and multi-level storage capacity.〈/sec〉〈sec〉Inspired by the excellent resistive switching characteristics of NiO and HfO〈sub〉2〈/sub〉, NiO〈sub〉〈i〉x〈/i〉〈/sub〉 films are deposited by magnetron sputtering on the Pt〈inline-formula〉〈tex-math id="Z-20230629144836"〉\begin{document}$\langle111\rangle $\end{document}〈/tex-math〉〈alternatives〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144836.jpg"/〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144836.png"/〉〈/alternatives〉〈/inline-formula〉 layer and the polycrystalline HfO〈sub〉2〈/sub〉 film, respectively. Their microstructures, resistive switching characteristics and conductive mechanisms are studied. X-ray diffractometer data show the 〈inline-formula〉〈tex-math id="Z-20230629144852"〉\begin{document}$\langle111\rangle $\end{document}〈/tex-math〉〈alternatives〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144852.jpg"/〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144852.png"/〉〈/alternatives〉〈/inline-formula〉 preferred orientation for the NiO〈sub〉〈i〉x〈/i〉〈/sub〉 film deposited on the Pt〈inline-formula〉〈tex-math id="Z-20230629144904"〉\begin{document}$\langle111\rangle $\end{document}〈/tex-math〉〈alternatives〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144904.jpg"/〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144904.png"/〉〈/alternatives〉〈/inline-formula〉 layer but the 〈inline-formula〉〈tex-math id="Z-20230629144913"〉\begin{document}$\langle100\rangle $\end{document}〈/tex-math〉〈alternatives〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144913.jpg"/〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230629144913.png"/〉〈/alternatives〉〈/inline-formula〉 preferred one for the film deposited on the polycrystalline HfO〈sub〉2〈/sub〉 layer. X-ray photoelectron depth profile of Ni 2p core level reveals that the NiO〈sub〉〈i〉x〈/i〉〈/sub〉 film is the mixture of oxygen-deficient NiO and Ni〈sub〉2〈/sub〉O〈sub〉3〈/sub〉. NiO〈sub〉〈i〉x〈/i〉〈/sub〉(111) films show bipolar resistive switching (RS) characteristics with a clockwise current-voltage (〈i〉I-V〈/i〉) loop, but its ratio of the high resistance to the low resistance (〈i〉R〈/i〉〈sub〉H〈/sub〉/〈i〉R〈/i〉〈sub〉L〈/sub〉) is only ~10, and its endurance is also poor. The NiO〈sub〉〈i〉x〈/i〉〈/sub〉(200)/HfO〈sub〉2〈/sub〉 stack exhibits bipolar RS characteristics with a counterclockwise 〈i〉I-V〈/i〉 loop. The 〈i〉R〈/i〉〈sub〉H〈/sub〉/〈i〉R〈/i〉〈sub〉L〈/sub〉 is greater than 10〈sup〉4〈/sup〉, the endurance is about 10〈sup〉4〈/sup〉 cycles, and the retention time exceeds 10〈sup〉4〈/sup〉 s. In the initial stage, the HfO〈sub〉2〈/sub〉/NiO〈sub〉〈i〉x〈/i〉〈/sub〉(200)/HfO〈sub〉2〈/sub〉 stack shows similar bi-level RS characteristics to the NiO〈sub〉〈i〉x〈/i〉〈/sub〉(200)/HfO〈sub〉2〈/sub〉 stack. However, in the middle and the last stages, its 〈i〉I-V〈/i〉 curves gradually evolve into tri-level RS characteristics with a “two-step Setting process” in the positive voltage region, showing potential applications in multilevel nonvolatile memory devices and brain-like neural synapses. Its 〈i〉I-V〈/i〉 curves in the high and the low resistance state follow the relationship of ohmic conduction (〈inline-formula〉〈tex-math id="Z-20230714031758-1"〉\begin{document}$ I \propto V $\end{document}〈/tex-math〉〈alternatives〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230714031758-1.jpg"/〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230714031758-1.png"/〉〈/alternatives〉〈/inline-formula〉), while the 〈i〉I-V〈/i〉 curves in the intermediate resistance state are dominated by the space-charge-limited-current mechanism (〈inline-formula〉〈tex-math id="Z-20230714031758-2"〉\begin{document}$ I \propto V^2 $\end{document}〈/tex-math〉〈alternatives〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230714031758-2.jpg"/〉〈graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20230331_Z-20230714031758-2.png"/〉〈/alternatives〉〈/inline-formula〉). The tri-level RS phenomena are attributed to the coexistence of the oxygen-vacancy conductive filaments in the NiO〈sub〉〈i〉x〈/i〉〈/sub〉(200) film and the space charge limited current in the upper HfO〈sub〉2〈/sub〉 film.〈/sec〉
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2023
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  • 9
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 4 ( 2022), p. 043102-
    Kurzfassung: The swelling of Ca-montmorillonite at elevated temperatures is important for many applications including geological disposal of radioactive waste, subsurface carbon sequestration, and shale gas exploration. However, the experimentally observed swelling behaviors of Ca-montmorillonite contacting liquid water and the temperature effects on the swelling pressure are not well understood. In this work, molecular dynamics simulations are carried out to study the swelling of Wyoming Ca-montmorillonite with a d-spacing (〈i〉d〈/i〉) range of 1.40–4.00 nm at 5 MPa and various temperatures (298–500 K). The ClayFF and SPC are adopted for modeling Ca-montmorillonite and water, respectively. The simulation box is measured to be 11.15, 3.66, and 28.00 nm in the 〈i〉x-〈/i〉, 〈i〉y-〈/i〉, and 〈i〉z〈/i〉-direction. Atomistic pistons are used to control the bulk pressure of the water environment, and the implicit walls are implemented for preventing the ions from leaking from the pore into the water environment. The clay atoms are fixed during the simulation and the swelling pressure is calculated through dividing the force by the area. The equilibrium time is at least 20 ns and the production time falls in a range of 50–88 ns. The swelling pressure results show that for small 〈i〉d〈/i〉, high temperature reduces the magnitude of the oscillating curve of swelling pressure and also reduces the range of 〈i〉d〈/i〉 where hydration force dominates the swelling pressure. This temperature effect is due to the weakened hydration force as evidenced from the weakened water density distributions inside the pore. For large 〈i〉d〈/i〉, high temperature reduces the swelling pressure, which is consistent with the experimental result, and increases the range of 〈i〉d〈/i〉 where double layer force dominates the swelling pressure. The reduction of the swelling pressure can be explained by the enhanced ion correlation that reduces the double layer force according to the strong coupling theory, given that the calculated coupling parameters at higher temperatures are smaller. The swelling pressures are negative at elevated temperatures and large 〈i〉d〈/i〉, which prevents the clay from further swelling. However, the classical Poisson-Boltzmann (PB) equation predicts the positive double layer force since the ion correlation effect is not considered in the PB equation. Furthermore, the calculated swelling free energy curve shows that at 298 K and 5 MPa, it is difficult for Ca-montmorillonite to swell beyond a 〈i〉d〈/i〉-spacing of around 1.9 nm, which is in good agreement with the experimental result. The energy barrier for Ca-montmorillonite to swell to large 〈i〉d〈/i〉 is larger than that for Na-montmorillonite, which means that it is more difficult for Ca-montmorillonite to swell to large 〈i〉d〈/i〉. This behavior is consistent with experimental observation and can be explained by the larger ion correlation effect in the Ca-montmorillonite system. These findings enhance the understanding of swelling of Ca-montmorillonite at elevated temperatures and could help to engineer better barrier materials for nuclear waste storage.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2022
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  • 10
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    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 7 ( 2012), p. 072904-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 7 ( 2012), p. 072904-
    Kurzfassung: Double layers of 150 mm?150 mm plastic scintillator arrays are used to locate the cosmic ray. Both layers of arrays are read out by wavelength-shifting fibers, which are bundled and coupled to image intensifier and ICCD camera. The light signal is delayed more than 200 ns by the image intensifier, so the ICCD can be pre-triggered by an external fast coincident signal. This cosmic ray positioning system is used to measure the time resolution and photon transfer time of the time-of-fly detector for the common test platform based on cosmic ray. Compared with traditional cosmic rays test, the data-taking efficiency of this system increases more than 30 times because of multi-point readout and higher position resolution. The test results show that the time resolution of the time-of-fly detector is better than 200 ps, which satisfies the requirement of the common platform based on cosmic ray.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2012
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