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  • AIP Publishing  (77)
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  • AIP Publishing  (77)
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  • 1
    In: Review of Scientific Instruments, AIP Publishing, Vol. 89, No. 12 ( 2018-12-01)
    Kurzfassung: A coupled-cavity linac (CCL) is widely used around the world in many fields. The radio frequency design is always a fundamental and crucial problem in CCL. In biperiodic structures, especially side-coupled structures, entirely different structures between accelerating cavities (ACs) and coupled cavities (CCs) will cause different frequency drops (δf) with the introduction of coupling slots. In order to achieve precise and consistent frequencies in each cell, the rule of individual cavity frequency drops should be figured out. A model of lumped resonant circuits is chosen to provide accurate prediction for normal mode frequencies. Through solving equivalent circuit equations, a parameter called frequency gap difference (ΔFg) is proposed, whose value is directly proportional to the frequency difference (df) between AC and CC and the ratio is one-to-one when AC frequency ( fa) is close to CC frequency ( fc). Based on the property of ΔFg, a simplified method on how to design and tune a triplet CCL is proposed; instead of tuning each individual cell, the new method only requires measuring the frequencies of the coupled normal modes, which considerably simplifies the tuning process and reduces the turn-around time. The particular design flow and tuning method have been successfully applied in the Nanjing University CCL Project. In addition, through comparing cavities with and without coupling slots, the value of frequency drops with different coupling coefficients is revealed and analyzed.
    Materialart: Online-Ressource
    ISSN: 0034-6748 , 1089-7623
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2018
    ZDB Id: 209865-9
    ZDB Id: 1472905-2
    SSG: 11
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 18 ( 2023-05-01)
    Kurzfassung: Silicon heterojunction (SHJ) solar cells with a two-densities stacked intrinsic hydrogenated amorphous silicon (i-a-Si:H) thin film passivated crystalline silicon surface have high VOC and efficiency. We investigated the dark stability of cells varied with the microstructure of i-a-Si:H layers. It has been found that the dark degradation is mainly from the change in the silicon hydrogen bonded configuration associated with voids size. Furthermore, the less degradation exists on cells with thicker dense i-a-Si:H layers, which results from the high bonded hydrogen content after the enhanced light-soaking (LS) and less change in voids during the dark storage in the i-a-Si:H layers. The microstructure changes, including bonded hydrogen content, voids size, and voids quantity, are related to the initial microstructure of i-a-Si:H layers. This can be illustrated by two actions of non-bonded hydrogens immersed in the undense part of the silicon network. As a result, to enhance the bonded hydrogen content in the i-a-Si:H layers is a preferred method to improve the dark stability of SHJ solar cell after LS.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2023
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 17 ( 2017-10-23)
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 17 ( 2017-10-23)
    Kurzfassung: Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials. We explain how the damage occurs in the porous material during plasma etching for a wide range of chuck temperatures and the responsible mechanism for plasma damage-free etching at cryogenic temperature, by a combination of experiments and numerical modeling.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2017
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2016
    In:  Review of Scientific Instruments Vol. 87, No. 8 ( 2016-08-01)
    In: Review of Scientific Instruments, AIP Publishing, Vol. 87, No. 8 ( 2016-08-01)
    Kurzfassung: A laser wavelength precision measurement method is presented based on the laser synthetic wavelength interferometer (LSWI). According to the linear relation between the displacements of measurement and reference arms in the interferometer, the synthetic wavelength produced by an unknown wavelength and a reference wavelength can be measured by detecting the phase coincidences of two interference signals. The advantage of the method is that a larger synthetic wavelength resulting from an unknown wavelength very close to the reference wavelength can be easily determined according to the linear relation in the interferometer. Then the unknown wavelength is derived according to the one-to-one corresponding relationship between single wavelength and synthetic wavelength. Wavelengths of an external cavity diode laser and two He-Ne lasers were determined experimentally. The experimental results show that the proposed method is able to realize a relative uncertainty on the order of 10−8.
    Materialart: Online-Ressource
    ISSN: 0034-6748 , 1089-7623
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2016
    ZDB Id: 209865-9
    ZDB Id: 1472905-2
    SSG: 11
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 90, No. 23 ( 2007-06-04)
    In: Applied Physics Letters, AIP Publishing, Vol. 90, No. 23 ( 2007-06-04)
    Kurzfassung: The authors demonstrated an investigation of the real-time growth of ZnO nanosheets via in situ observation in an environmental scanning electron microscope. It was found that ZnO nanosheets were grown in a two-stage process: [21¯1¯0]-oriented nanowires were grown first, and then ZnO nanosheets grew perpendicularly on the parent nanowires along the [0001] axis. The authors’ results revealed that the change of the ZnO growth direction from [21¯1¯0] (a axis) to [0001] (c axis) can be achieved by control of the growth temperature.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2007
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    In: AIP Advances, AIP Publishing, Vol. 12, No. 1 ( 2022-01-01)
    Kurzfassung: The eco-friendly insulating medium C6F12O has good insulation properties, and it has the prospect to be used in medium and low voltage switchgear. The compatibility between C6F12O and the sealing material commonly used in gas-insulated equipment [nitrile butadiene rubber (NBR)] needs to be studied before C6F12O could be put into practical use. In this paper, the compatibility test between NBR and C6F12O is carried out. Scanning electron microscopy and x-ray photoelectron spectroscopy are used to detect the surface morphology and element changes in NBR before and after the test. At the same time, the interaction between C6F12O and NBR is simulated based on molecular dynamics, and the solubility parameters, diffusion coefficient, and radial distribution function are calculated. The test results show that the NBR surface is damaged by C6F12O for a long time and a large number of raised cracks and F elements appear on the NBR surface. At the same time, the calculation results show that the solubility parameter of SF6 and C6F12O is 18.730 and 14.267 (J/cm3)1/2, respectively. The diffusion coefficient of C6F12O in NBR (13.500 × 10−7 cm2/s) is higher than that of SF6 (10.333 × 10−7 cm2/s), which reveals that C6F12O is easier to diffuse in NBR. Both C6F12O/NBR and SF6/NBR have hydrogen bonding force, but the interaction between C6F12O and NBR is stronger than that of SF6. These results can provide theoretical and technical reference for the material selection and design of C6F12O gas insulated equipment.
    Materialart: Online-Ressource
    ISSN: 2158-3226
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2022
    ZDB Id: 2583909-3
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2022
    In:  Applied Physics Reviews Vol. 9, No. 3 ( 2022-09-01)
    In: Applied Physics Reviews, AIP Publishing, Vol. 9, No. 3 ( 2022-09-01)
    Kurzfassung: Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.
    Materialart: Online-Ressource
    ISSN: 1931-9401
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2022
    ZDB Id: 2265524-4
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 26 ( 2022-06-27)
    Kurzfassung: In this work, we report a high-performance photodetector based on perovskite CH3NH3PbBr3 quantum dots (QDs) films with a configuration of Au/CH3NH3PbBr3 QDs-Al2O3-indium tin oxide/Au as a bioinspired photoelectric synapse. The uniform CH3NH3PbBr3 QDs thin film is fabricated by a electrodepositing QDs solution and exhibits favorable long-term stability at ambient. By inserting an Al2O3 film, the dark current of the QDs film photodetectors is significantly suppressed as a result of the blocking effect, accompanied by the enhanced ON/OFF ratio. Furthermore, the optimal photodetector is utilized as a photoelectric synapse. Through modulating the light pulse stimuli, some underlying synaptic functions, including paired-pulse facilitation, axon-multi-synapses network function, and the transformation from short-term plasticity to long-term plasticity, are flexibly emulated on a single photoelectric synapse. These remarkable results are promising for building hardware units with neuromorphic architecture to mimic the human brain functionalities.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2022
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 23 ( 2021-12-06)
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 23 ( 2021-12-06)
    Kurzfassung: Nanopatterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layers fabricated by soft-nanoimprint were applied to CH3NH3PbBr3 (MAPbBr3) light-emitting diodes to enhance light extraction. The electric field distribution of MAPbBr3 devices with different periods of the nanopatterned PEDOT:PSS was calculated using the finite-difference time-domain method, demonstrating that the 400-nm period was more effective in improving light outcoupling. By integrating the nanopatterned PEDOT:PSS layer, the external quantum efficiency of the device increased from 6.5% to 10.3%. It can be attributed to the fact that the nanopatterned structure reduced the refractive index discontinuity at the interface between MAPbBr3 and PEDOT:PSS, thereby reducing light trapping in the waveguide mode.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2021
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2018
    In:  The Journal of Chemical Physics Vol. 148, No. 1 ( 2018-01-07)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 148, No. 1 ( 2018-01-07)
    Kurzfassung: Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2–MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.
    Materialart: Online-Ressource
    ISSN: 0021-9606 , 1089-7690
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2018
    ZDB Id: 3113-6
    ZDB Id: 1473050-9
    Standort Signatur Einschränkungen Verfügbarkeit
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