In:
Journal of Applied Physics, AIP Publishing, Vol. 101, No. 11 ( 2007-06-01)
Abstract:
Chemically cleaned GaP(001) surfaces in aqueous HF solutions have been studied using spectroscopic ellipsometry (SE), ex situ atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), wettability, and photoluminescence (PL) measurements. The SE data clearly indicate that the solutions cause removal of the native oxide film immediately upon immersing the sample (≤1 min). The SE data, however, suggest that the native oxide film cannot be completely etch-removed. This is due to the fact that as soon as the etched sample is exposed to air, the oxide starts to regrow. The SE estimated roughness is ∼1 nm, while the AFM roughness value is ∼0.3 nm. The XPS spectra confirm the removal of the native oxide and also the presence of regrown oxide on the HF-etched GaP surface. The wettability measurements indicate that the HF-cleaned surface is hydrophobic, which is in direct contrast to those obtained from alkaline-cleaned surfaces (hydrophilic). A slight increase in the PL intensity is also observed after etching in aqueous HF solutions.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink