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  • 1
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    Inorganic nitrogen uptake by phytoplankton in the marginal ice zone of the Fram Strait (1989)
    In:  EPIC3Rapp P -v Réun Cons int Explor Mer, 188, pp. 90-97
    Details
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , peerRev
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    PAPER (OA)
  • 2
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    Antarctic Mesopelagic Micronekton: Evidence from Seabirds That Pack Ice Affects Community Structure (1986)
    American Association for the Advancement of Science (AAAS)
    In:  Science, 232 (4752). pp. 847-849.
    Details
    Publication Date: 2016-10-05
    Description: Through a multidisciplinary project (AMERIEZ), with an unusual complement of components, previously unknown temporal and spatial dimensions to the structure of Antarctic epipelagic and mesopelagic communities were revealed. In late spring, an abundance of crustacean species thought to occur only below 300 meters was detected in ice-covered surface waters. Evident in ice-free waters were the expected occurrence patterns of these normally nonmigratory mesopelagic organisms. Where the pack was consolidated and little light penetrated to depth, primary and secondary production was confined to ice floes, and the physical environment immediately beneath the ice was reminiscent of a mesopelagic one. This suite of characteristics possibly explains why the crustaceans resided at the surface.
    Type: Article , PeerReviewed
    Format: text
    DOI: 10.1126/science.232.4752.847
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    OceanRep: Article in a Scientific Journal - peer-reviewed
  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of acceptors in p-InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1993-1996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of hydrogenation of InP without surface degradation has been surmounted by exposure of the InP surface to a hydrogen plasma through a thin SiNx(H) cap layer. This layer is H permeable at the hydrogenation temperature of 250 °C, but P or PH3 impermeable thus minimizing PH3 loss and the attendant In droplet formation. In contrast to our results for this type of plasma exposure of GaAs, we find that shallow acceptors in InP are heavily passivated, whereas shallow donors are only very weakly affected. For example, p+-InP(Zn) of 3×1018 cm−3 has its residual hole concentration reduced to ≤3×1014 cm−3 over a depth of 1.3 μm by a 250 °C, 0.5 h deuteration. The presence of acceptors impedes H (or D) indiffusion, as indicated by D diffusion under the same conditions occurring to depths of 18 and 35 μm in p-InP (Zn, 2×1016 cm−3) and n-InP (S or Sn), respectively. Annealing for 1 min at 350 °C causes the acceptor passivation to be lost and the hole concentration to be returned to its prehydrogenation level, indicating that the passivation has similar thermal stability to that of acceptors in GaAs, but lower than that of donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344508
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-InGaAsP nonalloyed ohmic contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed ohmic contacts of Pt/Ti to 5×1018 cm−3 doped p-InGaAsP (λg =1.3 μm) have been fabricated by rapid thermal processing of sputtered and e-gun-deposited metallizations. While the former as-deposited had a rectifying characteristic, the latter showed ohmic behavior prior to any heat treatment, with a specific contact resistance of 4×10−3 Ω cm2. Rapid thermal processing at temperatures higher than 400 °C caused the formation of ohmic contacts for the sputtered metals also, but with the evaporated metals producing slightly lower contact resistance. The lowest specific contact resistance values of 3.6–5.5×10−4 Ω cm2 for evaporated and sputtered metallizations, respectively, were achieved in both cases as a result of heating at 450 °C for 30 s. These heating conditions produced only a limited reaction at the Ti/InGaAsP interface, which was sharper for the e-gun-deposited contact, but had a significant effect on the stresses in the Ti/Pt bilayer. In both the sputtered and electron gun evaporated samples, the stresses were inverted from tensile as-deposited to compressive with values of 2.4×109 and 1.0×109 dyn cm−2, respectively, as a result of the heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343291
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Study of reactive-ion-etch-induced lattice damage in silicon by Ar, CF4, NF3, and CHF3 plasmas (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2059-2063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive-ion-etch-induced damage in silicon has been investigated using transmission electron microscopy (TEM), Rutherford backscattering (RBS) ion channeling, and laser-induced thermal waves (TW). A correlation has been found between lattice damage in silicon due to reactive ion etching and leakage current properties of thermal oxide films subsequently grown on the damaged silicon. The silicon wafers were plasma etched using Ar, CF4, NF3, and CHF3 etch gases at dc bias voltages ranging from 150 V to 450 V. Lattice damage at the silicon surface, as determined by TEM and RBS, was found to depend on both the dc bias voltage and the etch chemistry. Subsequent leakage current measurements of the silicon oxides show that the samples with more silicon substrate lattice damage prior to oxidation also have correspondingly higher leakage. The thermal wave technique also indicates a damage dependence on dc bias and on etch chemistry; however, the thermal wave measurements indicate a damage dependence on etch chemistry different from TEM and RBS measurements. The source of this difference is not yet understood.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341713
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    AuBe/p-InGaAsP contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2056-2060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloyed ohmic contacts of AuBe (1% Be by weight) to 5×1018 cm−3 Zn-doped p-InGaAsP (λg=1.3 μm) were fabricated by rapid thermal processing and its performance was compared to those of the contacts formed by conventional furnace heating. The specific contact resistance decreased from a value of 4.9×10−4 Ω cm2 as-deposited to a value of 4.9×10−7 Ω cm2 as a result of rapid thermal processing at 420 °C for 30 s. This value was much lower than the value of 3.9×10−6 Ω cm2 obtained as a result of furnace heat treatment at 420 °C for 10 min. Rapid thermal processing at higher temperatures caused a sharp increase of the specific contact resistance. Auger depth profiling indicated that the degradation of the contact electrical performance at temperatures of 450 °C or higher were caused by intensive localized interactions between the AuBe and the InGaAsP and out-diffusion of all the quaternary elements toward the surface of the contact. The effective stress in the alloyed layer, normalized to the initial AuBe thickness of 80 nm, was tensile with a value of 7×109 dyn cm−2, and was less sensitive to the alloying parameters (time and temperature) than was the contact resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344295
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342547
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  • 8
    Electronic Resource
    Electronic Resource
    Temporal behavior of modulated optical reflectance in silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 240-248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the results of a study of the temporal behavior of the laser-induced modulated optical reflectance from the surfaces of crystalline silicon wafers, epitaxial silicon films, and ion implanted but unannealed silicon wafers. The observed temporal behavior of this signal appears to be associated with the presence and temporal evolution of electronic surface states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338863
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  • 9
    Electronic Resource
    Electronic Resource
    Detection of thermal waves through modulated optical transmittance and modulated optical scattering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1392-1394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that variations in local optical constants induced by the presence of thermal waves can be used for thermal wave detection and analysis through measurements of thermal wave-induced modulated transmittance and scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336486
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogenation of shallow-donor levels in GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2821-2827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow-donor levels due to Si, Ge, Sn, S, Se, and Te in GaAs are neutralized by association with atomic hydrogen; Si and Te donors in AlGaAs have also been shown to be neutralized. In contrast, the shallow acceptors Be, Mg, Zn, and Cd in GaAs are relatively unaffected by hydrogenation. The activation energy for recovery of the donor electrical activity is around 2.1 eV for each of the species, but varies as the strength of an isolated hydrogen-donor species bond. The neutralization depth of the donors is proportional to the inverse square root of donor concentration, and this depth is given as a function of plasma exposure temperature (100–350 °C) and bonding site density (8×1013–1.5×1018 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336964
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