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  • 1
    facet.materialart.
    Unbekannt
    In:  EPIC3Rapp P -v Réun Cons int Explor Mer, 188, pp. 90-97
    Publikationsdatum: 2019-07-17
    Repository-Name: EPIC Alfred Wegener Institut
    Materialart: Article , peerRev
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Publikationsdatum: 2021-06-14
    Beschreibung: In 2018 we celebrated 25 years of development of radar altimetry, and the progress achieved by this methodology in the fields of global and coastal oceanography, hydrology, geodesy and cryospheric sciences. Many symbolic major events have celebrated these developments, e.g., in Venice, Italy, the 15th (2006) and 20th (2012) years of progress and more recently, in 2018, in Ponta Delgada, Portugal, 25 Years of Progress in Radar Altimetry. On this latter occasion it was decided to collect contributions of scientists, engineers and managers involved in the worldwide altimetry community to depict the state of altimetry and propose recommendations for the altimetry of the future. This paper summarizes contributions and recommendations that were collected and provides guidance for future mission design, research activities, and sustainable operational radar altimetry data exploitation. Recommendations provided are fundamental for optimizing further scientific and operational advances of oceanographic observations by altimetry, including requirements for spatial and temporal resolution of altimetric measurements, their accuracy and continuity. There are also new challenges and new openings mentioned in the paper that are particularly crucial for observations at higher latitudes, for coastal oceanography, for cryospheric studies and for hydrology. The paper starts with a general introduction followed by a section on Earth System Science including Ocean Dynamics, Sea Level, the Coastal Ocean, Hydrology, the Cryosphere and Polar Oceans and the “Green” Ocean, extending the frontier from biogeochemistry to marine ecology. Applications are described in a subsequent section, which covers Operational Oceanography, Weather, Hurricane Wave and Wind Forecasting, Climate projection. Instruments’ development and satellite missions’ evolutions are described in a fourth section. A fifth section covers the key observations that altimeters provide and their potential complements, from other Earth observation measurements to in situ data. Section 6 identifies the data and methods and provides some accuracy and resolution requirements for the wet tropospheric correction, the orbit and other geodetic requirements, the Mean Sea Surface, Geoid and Mean Dynamic Topography, Calibration and Validation, data accuracy, data access and handling (including the DUACS system). Section 7 brings a transversal view on scales, integration, artificial intelligence, and capacity building (education and training). Section 8 reviews the programmatic issues followed by a conclusion.
    Sprache: Englisch
    Materialart: info:eu-repo/semantics/article
    Format: application/pdf
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    facet.materialart.
    Unbekannt
    American Association for the Advancement of Science (AAAS)
    In:  Science, 232 (4752). pp. 847-849.
    Publikationsdatum: 2016-10-05
    Beschreibung: Through a multidisciplinary project (AMERIEZ), with an unusual complement of components, previously unknown temporal and spatial dimensions to the structure of Antarctic epipelagic and mesopelagic communities were revealed. In late spring, an abundance of crustacean species thought to occur only below 300 meters was detected in ice-covered surface waters. Evident in ice-free waters were the expected occurrence patterns of these normally nonmigratory mesopelagic organisms. Where the pack was consolidated and little light penetrated to depth, primary and secondary production was confined to ice floes, and the physical environment immediately beneath the ice was reminiscent of a mesopelagic one. This suite of characteristics possibly explains why the crustaceans resided at the surface.
    Materialart: Article , PeerReviewed
    Format: text
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1993-1996 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The problem of hydrogenation of InP without surface degradation has been surmounted by exposure of the InP surface to a hydrogen plasma through a thin SiNx(H) cap layer. This layer is H permeable at the hydrogenation temperature of 250 °C, but P or PH3 impermeable thus minimizing PH3 loss and the attendant In droplet formation. In contrast to our results for this type of plasma exposure of GaAs, we find that shallow acceptors in InP are heavily passivated, whereas shallow donors are only very weakly affected. For example, p+-InP(Zn) of 3×1018 cm−3 has its residual hole concentration reduced to ≤3×1014 cm−3 over a depth of 1.3 μm by a 250 °C, 0.5 h deuteration. The presence of acceptors impedes H (or D) indiffusion, as indicated by D diffusion under the same conditions occurring to depths of 18 and 35 μm in p-InP (Zn, 2×1016 cm−3) and n-InP (S or Sn), respectively. Annealing for 1 min at 350 °C causes the acceptor passivation to be lost and the hole concentration to be returned to its prehydrogenation level, indicating that the passivation has similar thermal stability to that of acceptors in GaAs, but lower than that of donors.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4319-4323 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nonalloyed ohmic contacts of Pt/Ti to 5×1018 cm−3 doped p-InGaAsP (λg =1.3 μm) have been fabricated by rapid thermal processing of sputtered and e-gun-deposited metallizations. While the former as-deposited had a rectifying characteristic, the latter showed ohmic behavior prior to any heat treatment, with a specific contact resistance of 4×10−3 Ω cm2. Rapid thermal processing at temperatures higher than 400 °C caused the formation of ohmic contacts for the sputtered metals also, but with the evaporated metals producing slightly lower contact resistance. The lowest specific contact resistance values of 3.6–5.5×10−4 Ω cm2 for evaporated and sputtered metallizations, respectively, were achieved in both cases as a result of heating at 450 °C for 30 s. These heating conditions produced only a limited reaction at the Ti/InGaAsP interface, which was sharper for the e-gun-deposited contact, but had a significant effect on the stresses in the Ti/Pt bilayer. In both the sputtered and electron gun evaporated samples, the stresses were inverted from tensile as-deposited to compressive with values of 2.4×109 and 1.0×109 dyn cm−2, respectively, as a result of the heat treatment.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2059-2063 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reactive-ion-etch-induced damage in silicon has been investigated using transmission electron microscopy (TEM), Rutherford backscattering (RBS) ion channeling, and laser-induced thermal waves (TW). A correlation has been found between lattice damage in silicon due to reactive ion etching and leakage current properties of thermal oxide films subsequently grown on the damaged silicon. The silicon wafers were plasma etched using Ar, CF4, NF3, and CHF3 etch gases at dc bias voltages ranging from 150 V to 450 V. Lattice damage at the silicon surface, as determined by TEM and RBS, was found to depend on both the dc bias voltage and the etch chemistry. Subsequent leakage current measurements of the silicon oxides show that the samples with more silicon substrate lattice damage prior to oxidation also have correspondingly higher leakage. The thermal wave technique also indicates a damage dependence on dc bias and on etch chemistry; however, the thermal wave measurements indicate a damage dependence on etch chemistry different from TEM and RBS measurements. The source of this difference is not yet understood.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2056-2060 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Alloyed ohmic contacts of AuBe (1% Be by weight) to 5×1018 cm−3 Zn-doped p-InGaAsP (λg=1.3 μm) were fabricated by rapid thermal processing and its performance was compared to those of the contacts formed by conventional furnace heating. The specific contact resistance decreased from a value of 4.9×10−4 Ω cm2 as-deposited to a value of 4.9×10−7 Ω cm2 as a result of rapid thermal processing at 420 °C for 30 s. This value was much lower than the value of 3.9×10−6 Ω cm2 obtained as a result of furnace heat treatment at 420 °C for 10 min. Rapid thermal processing at higher temperatures caused a sharp increase of the specific contact resistance. Auger depth profiling indicated that the degradation of the contact electrical performance at temperatures of 450 °C or higher were caused by intensive localized interactions between the AuBe and the InGaAsP and out-diffusion of all the quaternary elements toward the surface of the contact. The effective stress in the alloyed layer, normalized to the initial AuBe thickness of 80 nm, was tensile with a value of 7×109 dyn cm−2, and was less sensitive to the alloying parameters (time and temperature) than was the contact resistance.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 347-353 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs-on-Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n-type (2×1017 cm−3) GaAs-on-Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H-implanted material, in comparison to 150 °C for the plasma-hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping in the GaAs close to the heterointerface is shown to occur at stacking faults and microtwins, in addition to extended dislocations.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 240-248 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the results of a study of the temporal behavior of the laser-induced modulated optical reflectance from the surfaces of crystalline silicon wafers, epitaxial silicon films, and ion implanted but unannealed silicon wafers. The observed temporal behavior of this signal appears to be associated with the presence and temporal evolution of electronic surface states.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1392-1394 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We show that variations in local optical constants induced by the presence of thermal waves can be used for thermal wave detection and analysis through measurements of thermal wave-induced modulated transmittance and scattering.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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