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  • 1990-1994  (4)
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  • 1990-1994  (4)
Year
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Linear and two-photon absorption of rectangular and sawtooth HgTe/CdTe superlattices
    AIP Publishing ; 1990
    In:  Journal of Applied Physics Vol. 68, No. 8 ( 1990-10-15), p. 4233-4241
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 68, No. 8 ( 1990-10-15), p. 4233-4241
    Abstract: Theoretical studies of linear and two-photon absorption spectra of HgTe/CdTe superlattices with rectangular and sawtooth potential profiles are reported. Under optimum condition, the two-photon absorption coefficient can be higher than 1 cm/kW. The possible application of these materials as optical limiters near 10 μm wavelength is discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.346214
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1990
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Optical properties of GaAs/Al x Ga1− x As multiple quantum wells versus electric field including exciton transition broadening effects in optical modulators
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 75, No. 5 ( 1994-03-01), p. 2618-2627
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 75, No. 5 ( 1994-03-01), p. 2618-2627
    Abstract: A systematic study of the refractive index and absorption coefficient of GaAs/AlxGa1−xAs quantum wells as a function of electric field is presented. In this model, the effective-mass mismatches between GaAs and AlxGa1−xAs have been considered. For the interband optical absorption, we have considered the effect of the final-state interactions, and found an analytical function well describing this effect. The line-shape functions and their appropriate linewidths due to the inhomogeneous broadening mechanisms have been considered as a function of layer thicknesses, Al fraction, electric field, and residual doping density in the intrinsic multiple-quantum-well (MQW) region of a p-i-n optical modulator. The calculated absorption coefficient as a function of wavelength and electric field agrees very well with the experimental data. The calculated refractive index is indirectly verified by comparing the calculated reflectance spectra with the measured data of a MQW reflection modulator.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.356237
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Theory of electron resonant tunneling of Si-based double-barrier structures
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 73, No. 5 ( 1993-03-01), p. 2402-2410
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 73, No. 5 ( 1993-03-01), p. 2402-2410
    Abstract: We present theoretical studies of resonant-tunneling characteristics of Si-based double-barrier structures within a tight-binding model. The model consists of four antibonding (sp3) orbitals per lattice site and is capable of describing the low-lying conduction bands accurately throughout the entire Brillouin zone. Current-voltage curves for some selected Si/Ge strained-layer double-barrier structures and lattice-matched Si/GaP double-barrier structures for different crystallographic orientations are calculated. Negative differential resistances are found for these structures.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.353094
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Resonant tunneling of electrons in Si/Ge strained-layer double-barrier tunneling structures
    AIP Publishing ; 1992
    In:  Applied Physics Letters Vol. 61, No. 12 ( 1992-09-21), p. 1405-1407
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 61, No. 12 ( 1992-09-21), p. 1405-1407
    Abstract: Resonant-tunneling characteristics of electrons in Si/Ge strained-layer double-barrier structures are investigated within an antibonding-orbital model. The model is capable of describing the low-lying conduction bands accurately throughout the entire Brillouin zone. J-V curves for some selected Si/Ge strained-layer double-barrier structures for three different crystallographic orientations are studied. Negative differential resistances are found for these structures grown along [001] and [111] directions, but not along the [110] direction.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.107552
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1992
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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