In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 8B ( 1994-08-01), p. L1142-
Abstract:
We have studied resonant tunneling (RT) through AlGaAs-GaAs triple-barrier diodes with diameters between 0.4 µm and 18 µm. We have observed two sets of fine structures just above and below the RT threshold voltage V th in the current-voltage curve of a submicron diode at T =4 K. The magnetic field dependence of the structure set above V th is well fitted by calculation assuming a diode sidewall-depletion confinement. The other set below V th is sample dependent and tends to disappear as the diode becomes smaller, which suggests that their origin is RT through impurity-bound states.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1142
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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