GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of stacking faults and the associated partial dislocations in pseudomorphic epilayers of ZnSe/GaAs(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5506-5508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: V-shaped double triangular faults in ZnSe/GaAs epilayers have been identified to be incomplete stacking fault pyramids and single stacking faults identified as stacking fault trapezoids. It is confirmed by transmission electron microscopy that 〈101〉 open boundaries of incomplete stacking fault pyramids are 30° Shockley partial dislocations. The closely spaced parallel acute and obtuse stair-rod dislocation pair in stacking fault trapezoids form a dislocation dipole. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363482
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Defect-enhanced second-harmonic generation in (SimGen)p superlattices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2072-2074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-harmonic generation (SHG) has been applied to study the influence of defects in short-period (SimGen)p strained-layer superlattices. With a misfit stacking fault defect density of ∼1010 cm−2 shown by transmission electron microscopy, it is found that the SH intensity increases by about one order of magnitude from that of the defect-free samples. We propose that the inhomogeneous strain field around the fault planes in the superlattice layers is responsible for this abrupt increase of SHG. The expected symmetry and the magnitude of the nonlinear susceptibility from these stacking fault defects are shown to be in agreement with the experimental observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121279
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Extremely low temperature formation of silicon dioxide on gallium arsenide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5788-5792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtain good quality and reliability due to the suppression of interdiffusion in such a low temperature process. The deposition rate of LPD-SiO2 on GaAs is up to 1265 Å/h. The refractive index of the LPD-SiO2 film on GaAs is about 1.42 with growth at 40 °C. When the LPD-SiO2 film on the GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor with a device area of 0.3 cm2, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A proposed mechanism for the LPD of SiO2 on GaAs is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366445
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Silicon nanowires prepared by laser ablation at high temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1835-1837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121199
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Direct observation of stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers by weak beam dark-field transmission electron microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1225-1227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using weak beam dark-field transmission electron microscopy, we have identified, by reference to stacking fault trapezoids, an additional crystal defect, a stacking fault tetrahedron, at the interface of ZnSe/GaAs(001) epilayers. Unlike the other stacking faults which are basically of uniform size, the size of stacking fault tetrahedra can vary by a few times, with a typical value of less than 10 nm. The stacking fault tetrahedron is a closed defect and does not extend very far from the interface. The density of the stacking fault tetrahedra is at least as high as that of the dominant stacking faults trapezoids. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119858
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    β-SiC nanorods synthesized by hot filament chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3942-3944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-step procedure has been developed to grow β-SiC nanorods from a solid carbon and silicon source on a Si substrate by hot filament chemical vapor deposition. This process is catalyzed by metallic particles which come from impurities in the solid source which is a plate made by pressing a mixture graphite and silicon powders at 150 °C. Hydrogen was introduced into the reaction chamber to react with the solid plate to produce hydrocarbon and hydrosilicon radicals which presumably reacted to form SiC nanorods. The nanorods consisted of a crystalline β-SiC core with an amorphous silicon oxide shell layer and grew along the [100] direction. The nanorods were 10–30 nm in diameter and less than 1 μm in length. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124231
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    SiO2-enhanced synthesis of Si nanowires by laser ablation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3902-3904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si nanowires with uniform size have been synthesized by laser ablation of highly pure Si powder targets mixed with SiO2. A bulk quantity of Si nanowires was successfully obtained by mixing 30%–70% of SiO2 into the Si powder target. SiO2 played a crucial role in enhancing the formation and growth of the Si nanowires. The morphology and microstructure of the Si nanowire tips have been systematically characterized by means of high-resolution transmission electron microscopy. No evidence of metal was found at the tips. The results suggest that Si oxide is more important than metal in catalyzing the formation of Si nanowires. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122930
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Germanium dioxide whiskers synthesized by laser ablation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3824-3826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We obtained germanium dioxide (GeO2) whiskers in bulk quantity by ablating a germanium target at 820 °C with a pulsed KrF excimer laser in an argon atmosphere. Most of the GeO2 whiskers were smooth and straight with hexagonal or triangular, or quadrilateral cross sections while some of them had a bamboo-shoot-shaped form. Results of scanning electron microscopy, transmission electron microscopy, and x-ray diffraction showed that the whiskers are hexagonal crystalline GeO2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124192
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of amorphous carbon nanowires (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2921-2923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By heating a pressed tablet of graphite powder mixed with nickel in a quartz tube mounted inside a high-temperature tube furnace at 1200 °C, amorphous carbon nanowires were formed on the inner wall of the quartz tube near a copper cooling finger. Bright-field images of transmission electron microscopy show that the diameters of the nanowires are around 40 nm. Selected-area electron diffraction and Raman study reveal that the nanowires have an amorphous structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125190
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Diameter modification of silicon nanowires by ambient gas (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1842-1844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si nanowires (SINWs) with different diameters have been synthesized by laser ablation in different ambient gases. SINWs with the diameter distribution peaks at ∼13.2 and ∼9.5 nm have been obtained respectively in He and Ar (5% H2). SINWs produced in N2 had the smallest peak diameter at 6 nm, and are mixed in with some spherical particles with diameters ranging from ∼9 nm to several hundreds nm. Elements from the ambient gas were not detected in the SINWs. SINWs produced in Ar(5% H2) and N2 atmospheres exhibited photoluminescence and spectral blue-shift with diameter reduction, which are attributable to two-dimensional quantum confinement effects in crystalline nanowires. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124846
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...