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  • 1995-1999  (3)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Electronic effects of sodium in epitaxial CuIn1−xGaxSe2 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4982-4985 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent Hall effect measurements were made on Na-contaminated and uncontaminated epitaxial p-type CuIn1−xGaxSe2 films. Na was introduced by diffusion into as-deposited samples using both NaOH and Na2Se as sources. Na concentrations were measured using secondary ion mass spectroscopy by comparison to an implanted standard. Films contaminated with Na from either source were found to have much lower compensating donor densities than as-deposited films. Oxygen and other impurities were not found to be necessary to produce this effect although some changes with Se content were observed. These were independent of the Na effect. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366365
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hole transport and doping states in epitaxial CuIn1−xGaxSe2 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1519-1526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent mobility, resistivity, and carrier concentration measurements were made on epitaxial single crystal thin films of group III-rich CuIn1−xGaxSe2 (CIGS). The films were produced using a hybrid sputtering and evaporation process on GaAs substrates. Samples with average Ga/(In+Ga) values between 0.03 and 1.0 and Cu/(In+Ga) between 0.73 and 1.00 were measured. All films were p type with room-temperature carrier concentrations between 4×1016 and 2×1019 cm−3. Fits to electrical measurements were consistent with the presence of two acceptor levels, with activation energies of 167±20 and 42±8 meV at low Ga contents, and compensating donors in all samples. Increasing Ga content was found to increase acceptor density and decrease acceptor level depth. Hole mobilities near room temperature were found to be between 167 and 311 cm2/V s and peak mobilities were between 439 and 1760 cm2/V s. Mobility behavior did not change significantly as a function of composition or the presence of a Ga gradient. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366860
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Gallium diffusion and diffusivity in CuInSe2 epitaxial layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4068-4070 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga diffusion in single crystal Cu(In1−xGax)Se2 (CIGS) epitaxial layers on GaAs was measured as a function of the Cu/In ratio in the CIGS. No Ga was supplied intentionally during deposition but Ga was released by the substrates into the growing film. The concentration profile of the Ga was determined by secondary ion mass spectrometry and was fit by numerical solution of Fick's second law including motion of the surface and the possibility of Ga desorption from the surface. All films studied had Cu/(In+Ga) ratios greater than 1.0, which was determined by the Ga outdiffusion from the GaAs. The Cu/In ratio was controlled by the deposition conditions. The Ga diffusivity was a minimum near a Cu/In ratio of 1.0 and increased rapidly for both higher and lower values of this ratio. The diffusivity ranged from a minimum of 2.7×10−13 cm2/s at Cu/In=0.94 to 5×10−11 cm2/s−12 cm2/s at Cu/In=1.41 and 7×10−12 cm2/s at Cu/In=0.43. It was concluded that Ga diffuses on metal vacancies on either the Cu or In sublattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117820
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    Paper (German National Licenses)
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