In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1494-
Abstract:
An annealed intrinsic hydrogenated amorphous silicon germanium (i-a-SiGe:H) barrier layer deposited on a Si wafer ([111], 4 k Ω-cm) was employed to fabricate a planar interdigitated metal-semiconductor-metal photodetector (MSM-PD). At a bias of 15 V, and an incident light wavelength of 850 nm, this Si-based MSM-PD with an annealed 70 nm i-a-SiGe:H film had a responsivity of about 0.32 A/W, and a dark current density of around 400 fA/µ m 2 . Also, the temporal response of this device had a rise time of 21 ps, a fall-time of 236 ps and a full-width at half-maximum (FWHM) of 51 ps.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1494
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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