In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 11R ( 2005-11-01), p. 7910-
Kurzfassung:
Large-area p-side-down InGaN light-emitting diodes (LEDs) 1000×1000 µm 2 in size have been fabricated by laser lift-off (LLO). The p-side-down LEDs with different geometric patterns of n-electrodes were fabricated to investigate electrode pattern-dependent optical characteristics. The current crowding effect was observed in the large-area p-side-down InGaN LLO-LEDs. A LED with a well-designed n-electrode pattern shows a uniform distribution of light emission and a higher output power due to uniform current spreading. The output power saturation induced by the current crowding effect was investigated. In the absence of a transparent contact layer for current spreading, the n-electrode pattern has a marked influence on the current distribution and the consequent light output power of the large-area p-side-down LEDs.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.7910
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2005
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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