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  • 1
    facet.materialart.
    Unbekannt
    In:  EPIC3Polar Biology, 11, pp. 219-225
    Publikationsdatum: 2019-07-17
    Repository-Name: EPIC Alfred Wegener Institut
    Materialart: Article , isiRev
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  • 2
    facet.materialart.
    Unbekannt
    In:  XXVIII General Assembly of the International Union of Geodesy and Geophysics (IUGG)
    Publikationsdatum: 2023-08-09
    Beschreibung: The Asian Summer Monsoon (ASM) is important for weather, climate, air quality and atmospheric composition with its location over a large densely-populated area that extends throughout South to Southeast and East Asia. Deep convection associated with the ASM lofts pollutants from urban and biomass burning source regions to the upper troposphere, where an enhancement of these pollutants accumulate in the associated upper tropospheric anticyclone. With local-scale processes such as urban emissions and deep convection connected to continental-scale impacts in the upper troposphere, it is a challenge to accurately model explicitly the critical multiscale processes with traditional chemistry transport models. However, a new class of modeling infrastructure, which has variable sized grid meshes, allows for such representation. In this presentation, we describe the Multiscale Infrastructure for Chemistry and Aerosols (MUSICA) and its application to the ASM. MUSICA version 0 makes use of a cubic sphere grid mesh that allows for higher-resolution grid spacing over specified regions. Recently, MUSICAv0 provided chemical forecasts during the Asian Summer Monsoon Chemical and Climate Impact Project (ACCLIP) field campaign in July-August 2022. Version 1 of MUSICA uses the Model Prediction Across Scales (MPAS) grid mesh and dynamical core, which allows regional refinement to convective-permitting scales (i.e., explicitly representing convection with ~3 km grids). MUSICAv1 is currently being tested to evaluate its computational performance. This presentation will provide examples of the capabilities of MUSICAv0 and MUSICAv1 in representing convective transport using ACCLIP field observations, in contrast with coarse-grid global chemistry transport models.
    Sprache: Englisch
    Materialart: info:eu-repo/semantics/conferenceObject
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  • 3
    ISSN: 1520-4804
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 3019-3027 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We present a new efficient Monte Carlo method for the molecular-based computer simulation of chemical systems undergoing any combination of reaction and phase equilibria. The method requires only a knowledge of the species intermolecular potentials and their ideal-gas properties, in addition to specification of the system stoichiometry and thermodynamic constraints. It avoids the calculation of chemical potentials and fugacities, as is similarly the case for the Gibbs ensemble method for phase equilibrium simulations. The method's simplicity allows it to be easily used for situations involving any number of simultaneous chemical reactions, reactions that do not conserve the total number of molecules, and reactions occurring within or between phases. The basic theory of the method is presented, its relationship to other approaches is discussed, and applications to several simple example systems are illustrated.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6237-6246 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The stresses induced in an evaporated Pt(75 nm)/Ti(50 nm) bilayer metallization scheme on InP and SiO2 (300 nm)/InP substrates, as well as the stress in a SiO2 layer (300 nm) on an InP substrate, were measured in situ during sintering at temperatures of 25 to 500 °C and after rapid thermal processing (RTP) at temperatures of 400, 450, and 500 °C for 30 s. The as-deposited highly tensile Pt/Ti bilayer structure on InP (5×109 dyn cm−2) was found to be stress-free when heated to 400 °C and to have relatively low tensile stress after cooling back to room temperature. The as-deposited Pt/Ti/SiO2 structure on InP was found to be only moderately tensile stressed (3×109 dyn cm−2) and became more tensile as a result of heating to 500 °C (5×109 dyn cm−2). The high tensile stress was preserved even after cooling back to room temperature. This is mostly due to the tendency of the plasma-enhanced chemical vapor deposited (PECVD) SiO2 layer to undergo densification and switch its as-deposited compressive stress (−2.5×109 dyn cm−2) to tensile (2×109 dyn cm−2) when heated to 500 °C. The measured stresses after rapid thermal processing (RTP) revealed no observable difference from the in situ measured stresses. This suggests a negligible influence of the speed of heating and cooling through the RTP on the overall stresses induced in the thin layers. The previously unknown coefficient of thermal expansion and the biaxial elastic moduli of the PECVD SiO2 and the evaporated Ti and Pt thin films were determined by in situ stress measurements of the above-mentioned structure as well as systems composed of the same thin layers deposited on Si, GaAs, GaP, and InAs substrates.
    Materialart: Digitale Medien
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  • 6
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temperature dependence of the resistance in the Pt(60 nm)/Ti(50 nm) nonalloyed ohmic contacts to p-InAs (Zn doped 1×1018 to 1×1019 cm−3 ) induced by rapid thermal processing in the temperature range of 300–600 °C was studied. The ohmic nature of these contacts was attributed to both the low metal-semiconductor interfacial barriers and to the heavily doped semiconductor contacting layers. A phenomenological model was used to fit the measured temperature dependence contact resistance. The results indicated conversion from thermionic emission as the dominant carriers transport mechanism across the interfacial barrier for the as-deposited sample to a combination of thermionic and field emission mechanism for the heat-treated samples.
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1123-1128 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have demonstrated the viability of depositing a thick Au bonding pad on top of Pt/Ti contacts on both p-InGaAs and n-InP within a single evaporation prior to heat treatment. This eliminates the usual post-sinter Au plating process. In particular, Au (500 nm)/Pt (60 nm)/Ti (50 nm) common contacts to Zn-doped 5×1018 cm−3 p-In0.53Ga0.47As and S-doped 1×1018 cm−3 n-InP were formed within a single pumpdown electron-gun evaporation and subsequently a single sintering process by means of rapid thermal processing. The lowest resistivity of these ohmic contacts were found to be 0.11 and 0.13 Ω mm (5.5×10−7 and 8×10−6 Ω cm2) for the p and n contacts, respectively. These values were achieved as a result of heating at 450 °C for 30 sec. This heat treatment caused a limited reaction at the Au-Pt and Pt-Ti interfaces, which did not lead to any significant intermixing of the Ti and Au. Thus, no significant indiffusion of the Au thorough the Pt barrier was observed and contact degradation did not occur. The stress of the as-deposited trilayer structure on InP was found to be 3×108 dyne cm2 tensile and increased to about 2×109 dyn cm2 as a result of the rapid thermal processing at 450 °C
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 785-792 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural and electrical damage imparted to InP and In0.72Ga0.28As0.6P0.4 (λg(approximately-equal-to)1.3 μm) surfaces during CH4/H2 reactive ion etching (RIE) have been examined. X-ray photoelectron spectroscopy was used to monitor changes in the surface chemistry, Rutherford backscattering spectrometry was used to measure crystallographic damage, and current-voltage and capacitance-voltage measurements were made to examine electrically active damage and its depth. Two classes of damage are observed: crystallographic damage originating from preferential loss of P (As) and/or ion bombardment-induced collision cascade mixing and, for p-type material, hydrogen passivation of Zn acceptors. Etching at 13.6 MHz, 60–90 mTorr, 10% CH4/H2, and bias voltages of ∼300 V contains gross ((approximately-greater-than)1%) damage as measured by RBS to within 40 A(ring) and electrically active damage to within 200 A(ring) of the surface. This is a factor of 3–6 shallower than other RIE processes operated below 10 mT with comparable or higher bias voltages. Acceptor passivation of both InP and InGaAsP, arising from the association of hydrogen with Zn sites, occurs to a depth of 2000 A(ring) after RIE and causes a decrease in carrier concentration in this layer. The effect is reversed, however, by rapid thermal processing at temperatures between 350 and 500 °C.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Inorganic chemistry 29 (1990), S. 5190-5196 
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2232-2237 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Homonuclear hard diatomics in the vicinity of a hard wall have been studied using Monte Carlo simulations. During the simulations the cavity distribution functions for parallel and perpendicular orientations with respect to the wall and their Legendre expansion coefficients were calculated. It is demonstrated that the Legendre expansion is rapidly convergent and only several coefficients are required to describe the wall-diatomic correlation function within the simulation error. In addition, two simple methods for theoretical prediction of the cavity distribution function at small distances are compared with the simulation data. These approaches require as input quantities only thermodynamic data for the bulk homogeneous fluid. Both methods yield good accuracy for the cavity correlation function at the specific orientations indicated and for the first two Legendre coefficients, but fail to accurately describe higher Legendre coefficients.
    Materialart: Digitale Medien
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