In:
Applied Physics Letters, AIP Publishing, Vol. 85, No. 10 ( 2004-09-06), p. 1823-1825
Kurzfassung:
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2004
ZDB Id:
211245-0
ZDB Id:
1469436-0
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