In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 1109 ( 2015-6), p. 276-280
Abstract:
In this paper, the nanostructured Sn-doped ZnO thin films were prepared by Spin coating technique on glass substrates at various Sn doping of 0, 1, 1.5, 1, 2.0 and 3 at.%. The structural, optical and electrical properties were characterized by field emission scanning electron microscopy (FESEM), X-Ray Diffraction (XRD), UV-Vis-NIR and I-V measurement, respectively. The surface morphology reveals that the average particle size of nanostructured Sn-doped ZnO thin films decreased as the Sn concentrations increased. The results show all films are transparent in the visible region with average transmittance above 88%. Meanwhile, the resistivity of Sn-soped ZnO thin films was decreased when the Sn concentrations increased. Among all of Sn-doped ZnO thin films, the thin films doped with 2 at.% shows the optimum properties of average resistivity and transmittance were 7.7 x 10 2 Ω.Cm and 96%, respectively.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.1109
DOI:
10.4028/www.scientific.net/AMR.1109.276
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2015
detail.hit.zdb_id:
2265002-7
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